All MOSFET. 2SJ526 Datasheet

 

2SJ526 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ526

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO220FM

2SJ526 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ526 Datasheet (PDF)

1.1. 2sj526.pdf Size:91K _renesas

2SJ526
2SJ526

2SJ526 Silicon P Channel MOS FET REJ03G0876-0600 Rev.6.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 ? typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.6.00 Jun 05, 2006 pa

1.2. rej03g0876 2sj526ds.pdf Size:104K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.1. 2sj525.pdf Size:142K _toshiba

2SJ526
2SJ526

2SJ525 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ525 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.1 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = -100 ľA (max) (V = -30 V) DS Enhancement-mod

5.2. 2sj520.pdf Size:44K _sanyo

2SJ526
2SJ526

Ordering number:ENN6435 P-Channel Silicon MOSFET 2SJ520 Load Switching Applications Features Package Dimensions ˇ Low ON resistance. unit:mm ˇ 2.5V drive. 2083B [2SJ520] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ520] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Gate 0 to 0.2 2 :

 5.3. rej03g0879 2sj529lsds.pdf Size:108K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.4. 2sj527.pdf Size:94K _renesas

2SJ526
2SJ526

2SJ527(L), 2SJ527(S) Silicon P Channel MOS FET REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.3 ? typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)

 5.5. rej03g0878 2sj528lsds.pdf Size:108K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. rej03g0877 2sj527lsds.pdf Size:107K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. 2sj528.pdf Size:94K _renesas

2SJ526
2SJ526

2SJ528(L), 2SJ528(S) Silicon P Channel MOS FET REJ03G0878-0300 (Previous: ADE-208-641A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 ? typ. • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:

5.8. 2sj529.pdf Size:94K _renesas

2SJ526
2SJ526

2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous: ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 ? typ. • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:

Datasheet: 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 40673 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 , 2SJ532 , 2SJ533 , 2SJ534 .

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