All MOSFET. 2N6756JTX Datasheet

 

2N6756JTX MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6756JTX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 掳C

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.33 Ohm

Package: TO204

2N6756JTX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6756JTX Datasheet (PDF)

4.1. 2n6756 irf130.pdf Size:147K _international_rectifier

2N6756JTX
2N6756JTX

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET?TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18? 14A The HEXFET?technology is the key to International Rectifier抯 advanced line of power MOSFET transistors. The efficient geometry and unique processing of this

5.1. 2n6757.pdf Size:141K _fairchild_semi

2N6756JTX
2N6756JTX

5.2. 2n6759.pdf Size:138K _fairchild_semi

2N6756JTX
2N6756JTX

5.3. 2n6755.pdf Size:136K _fairchild_semi

2N6756JTX
2N6756JTX

5.4. 2n6758 irf230.pdf Size:147K _international_rectifier

2N6756JTX
2N6756JTX

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET?TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40? 9.0A TO-3 The HEXFET?technology is the key to International Rectifier抯 advanced line of power MOSFET transistors. The efficient geometry and unique processing

5.5. 2n6753.pdf Size:11K _semelab

2N6756JTX

2N6753 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.6. 2n6751.pdf Size:12K _semelab

2N6756JTX

2N6751 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.7. 2n6754.pdf Size:11K _semelab

2N6756JTX

2N6754 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.8. 2n6753 2n6754.pdf Size:130K _inchange_semiconductor

2N6756JTX
2N6756JTX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION 路With TO-3 package 路High breakdown voltage 路Low saturation voltage 路Fast switching speed APPLICATIONS 路Off-line power supplies 路High-voltage inverters 路Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

5.9. 2n6751 2n6752.pdf Size:130K _inchange_semiconductor

2N6756JTX
2N6756JTX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION 路With TO-3 package 路High breakdown voltage 路Low saturation voltage 路Fast switching speed APPLICATIONS 路Off-line power supplies 路High-voltage inverters 路Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

Datasheet: 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN , 2N6756JANTX , 2N6756JANTXV , IRFP4227 , 2N6756JTXV , 2N6757 , 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV , 2N6758JTX , 2N6758JTXV .

 


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