All MOSFET. IXFT7N90 Datasheet

 

IXFT7N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFT7N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO268

IXFT7N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFT7N90 Datasheet (PDF)

1.1. ixfh7n90q ixft7n90q.pdf Size:112K _ixys

IXFT7N90
IXFT7N90

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM

5.1. ixfh70n15 ixft70n15.pdf Size:52K _ixys

IXFT7N90
IXFT7N90

Advanced Technical Information IXFH 70N15 VDSS = 150 V HiPerFETTM IXFT 70N15 ID25 = 70 A Power MOSFETs RDS(on) = 28 mW trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 150 V VGS Continuous ±20 V VGSM Transient ±30 V (TAB) ID2

5.2. ixfh75n10q ixft75n10q.pdf Size:151K _ixys

IXFT7N90
IXFT7N90

Advanced Technical Information IXFH 75N10Q VDSS = 100 V HiPerFETTM IXFT 75N10Q ID25 = 75 A Power MOSFETs RDS(on) = 20 mW Q-Class t £ 200ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous

 5.3. ixfh70n30q3 ixft70n30q3.pdf Size:131K _ixys

IXFT7N90
IXFT7N90

Advance Technical Information HiperFETTM VDSS = 300V IXFT70N30Q3 Power MOSFETs ID25 = 70A IXFH70N30Q3 ≤ Ω Q3-Class RDS(on) ≤ Ω ≤ 54mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V TO-247 (IXFH) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300

Datasheet: IXFT32N50 , IXFT32N50Q , IXFT40N30Q , IXFT4N100Q , IXFT52N30Q , IXFT58N20Q , IXFT60N25Q , IXFT6N100Q , IRF5305 , IXFT80N10Q , IXFT80N20Q , IXFX100N25 , IXFX120N20 , IXFX13N100 , IXFX14N100 , IXFX150N15 , IXFX15N100 .

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