MMF60R580PTH MOSFET. Datasheet pdf. Equivalent
Type Designator: MMF60R580PTH
Marking Code: 60R580P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 428 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-220F
MMF60R580PTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMF60R580PTH Datasheet (PDF)
mmf60r580pth.pdf
MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r580pth.pdf
isc N-Channel MOSFET Transistor MMF60R580PTHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
mmf60r580p.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF60R580PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
mmf60r580qth.pdf
MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r580qth.pdf
isc N-Channel MOSFET Transistor MMF60R580QTHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
