MMF60R580PTH PDF and Equivalents Search

 

MMF60R580PTH PDF Specs and Replacement


   Type Designator: MMF60R580PTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 428 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220F
 

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MMF60R580PTH PDF Specs

 ..1. Size:1156K  magnachip
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MMF60R580PTH

MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as ... See More ⇒

 ..2. Size:279K  inchange semiconductor
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MMF60R580PTH

isc N-Channel MOSFET Transistor MMF60R580PTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 4.1. Size:199K  inchange semiconductor
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MMF60R580PTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R580P FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒

 5.1. Size:1563K  magnachip
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MMF60R580PTH

MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as ... See More ⇒

Detailed specifications: MMDF3N02HDR2G , MME60R290PRH , MME70R380PRH , MMF50R280PTH , MMF60R115PTH , MMF60R190PTH , MMF60R290PTH , MMF60R360PTH , IRF830 , MMF60R750PTH , MMF65R190PTH , MMF70R600PTH , MMF70R900PTH , MMF80R1K2PTH , MMF80R900PTH , MMFT107T1 , MMFT2406T1 .

History: CED2303

Keywords - MMF60R580PTH MOSFET specs

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