All MOSFET. IXTH6N80 Datasheet

 

IXTH6N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH6N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO247

IXTH6N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH6N80 Datasheet (PDF)

1.1. ixth6n80-a ixtm6n80-a.pdf Size:102K _ixys

IXTH6N80
IXTH6N80

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N80 800 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N80A 800 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C6 A TO

4.1. ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf Size:184K _ixys

IXTH6N80
IXTH6N80

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 ? ? RDS(on) ? 2.2? ? ? ? ? ? ? IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25C to 150C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 300 W G D D (Tab) TJ - 55 ... +150 C S TJM 1

4.2. ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf Size:206K _ixys

IXTH6N80
IXTH6N80

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 ≤ Ω RDS(on) ≤ 500mΩ ≤ Ω ≤ Ω ≤ Ω IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25°C to 150°C 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 300 W G D D (Tab) TJ - 55 .

4.3. ixth6n150.pdf Size:116K _ixys

IXTH6N80
IXTH6N80

Advance Technical Information High Voltage VDSS = 1500V IXTH6N150 ID25 = 6A Power MOSFET ? ? RDS(on) ? 3.5? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M? 1500 V G D Tab VGSS Continuous 20 V S VGSM Transient 30 V G = Gate D = Drain I

4.4. ixth6n120 ixtt6n120.pdf Size:588K _ixys

IXTH6N80
IXTH6N80

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET ? RDS(on) = 2.6 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C6 A IDM TC = 25C, pulse

4.5. ixth6n90-a ixtm6n90-a.pdf Size:104K _ixys

IXTH6N80
IXTH6N80

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N90 900 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N90A 900 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C6 A T

Datasheet: IXTH5N100 , IXTH5N100A , IXTH67N08MA , IXTH67N08MB , IXTH67N10 , IXTH67N10MA , IXTH67N10MB , IXTH68N20 , IRFP260 , IXTH6N80A , IXTH6N90 , IXTH6N90A , IXTH75N10 , IXTH7P50 , IXTH8P50 , IXTK21N100 , IXTK33N45 .

 


IXTH6N80
  IXTH6N80
  IXTH6N80
 

social 

LIST

Last Update

MOSFET: IRLIZ44NPBF | IRLIZ44GPBF | IRLIZ34NPBF | IRLIZ34GPBF | IRLIZ24NPBF | IRLIZ14GPBF | IRLIB9343PBF | IRLIB4343 | IRLI640GPBF | IRLI630GPBF | IRLI620GPBF | IRLI540NPBF | IRLI540GPBF | IRLI540G | IRLI530GPBF |