All MOSFET. IXTM6N80A Datasheet

 

IXTM6N80A MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTM6N80A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO204

IXTM6N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTM6N80A Datasheet (PDF)

2.1. ixth6n80-a ixtm6n80-a.pdf Size:102K _ixys

IXTM6N80A
IXTM6N80A

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N80 800 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N80A 800 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C6 A TO

4.1. ixth6n90-a ixtm6n90-a.pdf Size:104K _ixys

IXTM6N80A
IXTM6N80A

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N90 900 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N90A 900 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C6 A T

5.1. ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf Size:579K _ixys

IXTM6N80A
IXTM6N80A

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 ? 100 V 67 A 25 m? ? ? ? IXTH / IXTM 75N10 ? 100 V 75 A 20 m? ? ? ? IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 M? 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 67N10 67 A 7

Datasheet: IXTM35N30 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , 2SK2611 , IXTM6N90 , IXTM6N90A , IXTM75N10 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB .

 


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