All MOSFET. WFF10N60 Datasheet

 

WFF10N60 Datasheet and Replacement


   Type Designator: WFF10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F
 

 WFF10N60 substitution

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WFF10N60 Datasheet (PDF)

 ..1. Size:695K  winsemi
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WFF10N60

WFF10N60WFF10N60WFF10N60WFF10N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,600V,R (Max 0.75)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

 7.1. Size:801K  winsemi
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WFF10N60

WFF10N65WFF10N65WFF10N65WFF10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

Datasheet: WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , MMD60R360PRH , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 , WFF20N60 .

Keywords - WFF10N60 MOSFET datasheet

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