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WFF10N65 Specs and Replacement


   Type Designator: WFF10N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-220F
 

 WFF10N65 substitution

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WFF10N65 Specs

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WFF10N65

WFF10N65 WFF10N65 WFF10N65 WFF10N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 10A,650V,R (Max 0.95 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Improved dv/dt capability General Description This... See More ⇒

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WFF10N65

WFF10N60 WFF10N60 WFF10N60 WFF10N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 10A,600V,R (Max 0.75 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Improved dv/dt capability General Description This... See More ⇒

Detailed specifications: WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , WFF10N60 , MMIS60R580P , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 , WFF20N60 , WFF20N60S .

Keywords - WFF10N65 MOSFET specs

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