WFF12N60 Datasheet and Replacement
Type Designator: WFF12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 133 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220F
WFF12N60 substitution
WFF12N60 Datasheet (PDF)
wff12n60.pdf

WFF12N60WFF12N60WFF12N60WFF12N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 12A, 600V,R (Max 0.65)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V = 4000V AC )ISO Maximum Junction T
wff12n65.pdf

WFF12N65WFF12N65WFF12N65WFF12N65Silicon N-Channel MOSFETFeatures 12A,650V,RDS(on)(Max0.78)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi s advancedplanar stripe, VDMOS technology. This latest technol
wff12n70s.pdf

WFF12N70SWFF12N70SWFF12N70SWFF12N70S700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFETFeatures Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150)General DescriptionPower MOSFET is fabricated using
Datasheet: WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , AO4468 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 , WFF20N60 , WFF20N60S , WFF2N60 .
History: IRF5305LPBF
Keywords - WFF12N60 MOSFET datasheet
WFF12N60 cross reference
WFF12N60 equivalent finder
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WFF12N60 substitution
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History: IRF5305LPBF



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