WFF12N60 Specs and Replacement
Type Designator: WFF12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 133 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220F
WFF12N60 substitution
WFF12N60 Specs
wff12n60.pdf
WFF12N60 WFF12N60 WFF12N60 WFF12N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 12A, 600V,R (Max 0.65 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V = 4000V AC ) ISO Maximum Junction T... See More ⇒
wff12n65.pdf
WFF12N65 WFF12N65 WFF12N65 WFF12N65 Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.78 )@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe, VDMOS technology. This latest technol... See More ⇒
wff12n70s.pdf
WFF12N70S WFF12N70S WFF12N70S WFF12N70S 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150 ) General Description Power MOSFET is fabricated using... See More ⇒
Detailed specifications: WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , AOD4184A , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 , WFF20N60 , WFF20N60S , WFF2N60 .
Keywords - WFF12N60 MOSFET specs
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