WFF12N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: WFF12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 51 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 51.7 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 155 pF
Maximum Drain-Source On-State Resistance (Rds): 0.78 Ohm
Package: TO-220F
WFF12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFF12N65 Datasheet (PDF)
wff12n65.pdf
WFF12N65WFF12N65WFF12N65WFF12N65Silicon N-Channel MOSFETFeatures 12A,650V,RDS(on)(Max0.78)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi s advancedplanar stripe, VDMOS technology. This latest technol
wff12n60.pdf
WFF12N60WFF12N60WFF12N60WFF12N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 12A, 600V,R (Max 0.65)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V = 4000V AC )ISO Maximum Junction T
wff12n70s.pdf
WFF12N70SWFF12N70SWFF12N70SWFF12N70S700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFETFeatures Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150)General DescriptionPower MOSFET is fabricated using
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
