WFF13N50 Datasheet and Replacement
Type Designator: WFF13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO-220F
WFF13N50 substitution
WFF13N50 Datasheet (PDF)
wff13n50.pdf

WFF13N50WFF13N50WFF13N50WFF13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce
Datasheet: WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , 5N50 , WFF15N60 , WFF18N50 , WFF20N60 , WFF20N60S , WFF2N60 , WFF2N60B , PJA138K , PJA3400 .
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