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WFF13N50 Specs and Replacement


   Type Designator: WFF13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-220F
 

 WFF13N50 substitution

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WFF13N50 Specs

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WFF13N50

WFF13N50 WFF13N50 WFF13N50 WFF13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 13A,500V, R (Max0.46 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produce... See More ⇒

Detailed specifications: WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , IRFP064N , WFF15N60 , WFF18N50 , WFF20N60 , WFF20N60S , WFF2N60 , WFF2N60B , PJA138K , PJA3400 .

History: SVF12N65CF

Keywords - WFF13N50 MOSFET specs

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