All MOSFET. WFP840B Datasheet

 

WFP840B Datasheet and Replacement


   Type Designator: WFP840B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220
 

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WFP840B Datasheet (PDF)

 ..1. Size:472K  winsemi
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WFP840B

WFP840BWFP840BWFP840BWFP840BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,500V, R (Max0.75)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

 8.1. Size:689K  winsemi
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WFP840B

WFP840WFP840WFP840WFP840Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 8A,500V,RDS(on)(Max 0.8)@VGS=10V Ultra-low Gate Charge(Typical 59nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral Descri

Datasheet: WFP70N06 , WFP70N06T , WFP730 , WFP740 , WFP7N60 , WFP830 , WFP830B , WFP840 , IRFZ24N , WFP8N60 , WFP8N60B , WFP9N20 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B .

History: PMPB33XN | 2SJ297S | DMP1045UFY4 | UTT6NP10G-S08-R | SIA537EDJ | DMP3085LSS | QM2N7002E3K1

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