WFP840B Specs and Replacement
Type Designator: WFP840B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-220
WFP840B substitution
WFP840B Specs
wfp840b.pdf
WFP840B WFP840B WFP840B WFP840B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,500V, R (Max0.75 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi... See More ⇒
wfp840.pdf
WFP840 WFP840 WFP840 WFP840 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 8A,500V,RDS(on)(Max 0.8 )@VGS=10V Ultra-low Gate Charge(Typical 59nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General Descri... See More ⇒
Detailed specifications: WFP70N06 , WFP70N06T , WFP730 , WFP740 , WFP7N60 , WFP830 , WFP830B , WFP840 , TK10A60D , WFP8N60 , WFP8N60B , WFP9N20 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B .
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