All MOSFET. JANSR2N7411 Datasheet

 

JANSR2N7411 MOSFET. Datasheet pdf. Equivalent

Type Designator: JANSR2N7411

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 15 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm

Package: TO205AF

JANSR2N7411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JANSR2N7411 Datasheet (PDF)

1.1. jansr2n7401.pdf Size:65K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7401 August 1998 File Number 4571 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, Features N-Channel Power MOSFET • 6A, 250V, rDS(ON) = 0.600Ω The Discrete Products Operation of Intersil has developed a • Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military space applications.

1.2. jansr2n7410.pdf Size:52K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, March 1998 N-Channel Power MOSFET Features Description • 3.5A, 100V, rDS(ON) = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

1.3. jansr2n7400.pdf Size:51K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 8A, 200V, rDS(ON) = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t

1.4. jansr2n7404.pdf Size:52K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description • 15A, -200V, rDS(ON) = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

1.5. jansr2n7405.pdf Size:52K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 25A (Note), 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

1.6. jansr2n7402.pdf Size:45K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 3A, 500V, rDS(ON) = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) tio

1.7. jansr2n7403.pdf Size:52K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description • 22A, -100V, rDS(ON) = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

1.8. jansr2n7406.pdf Size:52K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

1.9. jansr2n7411.pdf Size:52K _intersil

JANSR2N7411
JANSR2N7411

JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description • 2.5A, -100V, rDS(ON) = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si

Datasheet: JANSR2N7400 , JANSR2N7401 , JANSR2N7402 , JANSR2N7403 , JANSR2N7404 , JANSR2N7405 , JANSR2N7406 , JANSR2N7410 , IRF9540 , KF907 , KF910 , KP101D , KP101E , KP101G , KP103E , KP103I , KP103J .

 


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