All MOSFET. MTP3055E Datasheet

 

MTP3055E MOSFET. Datasheet pdf. Equivalent

Type Designator: MTP3055E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO220

MTP3055E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP3055E Datasheet (PDF)

1.1. mtp3055e.pdf Size:294K _st

MTP3055E
MTP3055E

MTP3055E N-CHANNEL 60V - 0.1? - 12ATO-220 STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID MTP3055E 60 V < 0.15 ? 12 A TYPICAL RDS(on) = 0.1? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 175°C OPERATING TEMPERATURE 2 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGUL

3.1. mtp3055vrev2a.pdf Size:160K _motorola

MTP3055E
MTP3055E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's? Data Sheet MTP3055V ? TMOS V Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on–resis- 12 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technolog

3.2. mtp3055v.pdf Size:142K _motorola

MTP3055E
MTP3055E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's? Data Sheet MTP3055V ? TMOS V Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on–resis- 12 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technolog

3.3. mtp3055vl.pdf Size:144K _motorola

MTP3055E
MTP3055E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's? Data Sheet MTP3055VL TMOS V? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on–resis- 12 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology

3.4. mtp3055vlrev2a.pdf Size:161K _motorola

MTP3055E
MTP3055E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's? Data Sheet MTP3055VL TMOS V? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on–resis- 12 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology

3.5. mtp3055a-afi.pdf Size:452K _st2

MTP3055E
MTP3055E

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3.6. mtp3055vl.pdf Size:42K _fairchild_semi

MTP3055E
MTP3055E

June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 12 A, 60 V. RDS(ON) = 0.18 ? @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching • Critical DC electrical parameters specified at elevated applications i.e. power supplies and power motor temp

Datasheet: MNT-LB32N16 , MNT-LB32N16-C4 , MNT-LB32N20 , MNT-LB32N20-C4 , MTB30N06VL , MTB30P06V , MTB35N06ZL , MTP10N10M , 2SK2545 , MTP3055EFI , MTP30N05E , MTP30N08M , MTP3N50E , MTP3N60 , MTP3N60FI , MTP6N60 , NDB4050 .

 


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