All MOSFET. NDS9953A Datasheet

 

NDS9953A MOSFET. Datasheet pdf. Equivalent

Type Designator: NDS9953A

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 2.9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: SO8

NDS9953A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDS9953A Datasheet (PDF)

1.1. nds9953a.pdf Size:210K _fairchild_semi

NDS9953A
NDS9953A

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe

4.1. nds9956a.pdf Size:209K _fairchild_semi

NDS9953A
NDS9953A

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08Ω @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia

4.2. nds9959.pdf Size:208K _fairchild_semi

NDS9953A
NDS9953A

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially

 4.3. nds9952a.pdf Size:234K _fairchild_semi

NDS9953A
NDS9953A

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08Ω @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de

Datasheet: NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , IRF8010 , NDS9955 , NDS9956A , NDS9957 , NDS9959 , NDT014 , NDT014L , NDT2955 , NDT3055 .

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