All MOSFET. PHB24N03LT Datasheet

 

PHB24N03LT MOSFET. Datasheet pdf. Equivalent

Type Designator: PHB24N03LT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.056 Ohm

Package: SOT404

PHB24N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB24N03LT Datasheet (PDF)

1.1. php24n03lt phb24n03lt.pdf Size:54K _philips2

PHB24N03LT
PHB24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 30 V d • Very low on-state resistance • Fast switching ID = 24 A • Stable off-state characteristics • High thermal cycling performance RDS(ON) ≤ 56 mΩ (VGS = 5 V) g • Low thermal resistance

2.1. phb24n03t 1.pdf Size:51K _philips2

PHB24N03LT
PHB24N03LT

Philips Semiconductors Product specification TrenchMOS? transistor PHB24N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 24 A trench technology. The device Ptot To

Datasheet: OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , IRF510 , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , PHB42N03LT , PHB44N06LT .

 


PHB24N03LT
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  PHB24N03LT
 

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