All MOSFET. LP9435LT1G Datasheet

 

LP9435LT1G Datasheet and Replacement


   Type Designator: LP9435LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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LP9435LT1G Datasheet (PDF)

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LP9435LT1G

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFET VDS= -30VRDS(ON), Vgs@-10V, Ids@-5.3A = 60mLP9435LT1GRDS(ON), Vgs@-4.5V, Ids@-4.2A = 90m3Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)Improved Shoot-Through FOM DSimple Drive Requirement Small Pack

Datasheet: LP2305DSLT1G , LP2305LT1G , LP2307LT1G , LP3401LT1G , LP3407LT1G , LP3443LT1G , LP4101LT1G , LP4411ET1G , 4435 , LRK7002WT1G , LS165 , LS166 , LS370 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G .

History: BUK763R4-30 | IXFP10N60P | PMV30ENEA | 2SK2897-01MR | SWP066R72E7T | IXFR24N90P | VBFB1208N

Keywords - LP9435LT1G MOSFET datasheet

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