LP9435LT1G Specs and Replacement
Type Designator: LP9435LT1G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-23
LP9435LT1G substitution
- MOSFET ⓘ Cross-Reference Search
LP9435LT1G datasheet
lp9435lt1g.pdf
LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 60m LP9435LT1G RDS(ON), Vgs@-4.5V, Ids@-4.2A = 90m 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO 236AB) Improved Shoot-Through FOM D Simple Drive Requirement Small Pack... See More ⇒
Detailed specifications: LP2305DSLT1G, LP2305LT1G, LP2307LT1G, LP3401LT1G, LP3407LT1G, LP3443LT1G, LP4101LT1G, LP4411ET1G, 5N65, LRK7002WT1G, LS165, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G
Keywords - LP9435LT1G MOSFET specs
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History: IRLML6244
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