All MOSFET. PHP65N06LT Datasheet

 

PHP65N06LT MOSFET. Datasheet pdf. Equivalent

Type Designator: PHP65N06LT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 63 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: SOT78

PHP65N06LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP65N06LT Datasheet (PDF)

1.1. php65n06lt 2.pdf Size:58K _philips2

PHP65N06LT
PHP65N06LT

Philips Semiconductors Product specification TrenchMOS? transistor PHP65N06LT, PHB65N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 55 V d • Very low on-state resistance • Fast switching ID = 63 A • Stable off-state characteristics • High thermal cycling performance RDS(ON) ? 18 m? (VGS = 5 V) g • Low thermal resistance RDS(ON) ? 16 m? (VGS = 1

2.1. php65n06t 1.pdf Size:52K _philips2

PHP65N06LT
PHP65N06LT

Philips Semiconductors Product specification TrenchMOS? transistor PHP65N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 63 A features very low on-state resistance

Datasheet: PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , BUZ90A , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT .

 


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