All MOSFET. PHX6ND50E Datasheet

 

PHX6ND50E MOSFET. Datasheet pdf. Equivalent

Type Designator: PHX6ND50E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 3.1 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: SOT186A

PHX6ND50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHX6ND50E Datasheet (PDF)

1.1. phx6nd50e 2.pdf Size:60K _philips2

PHX6ND50E
PHX6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performance g Isolated package RDS(ON) ? 1.5 ? Fast reverse recovery diode trr = 180 ns s GENERAL DESCRI

5.1. phx6na60e.pdf Size:25K _philips2

PHX6ND50E
PHX6ND50E

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Low feedback capacitance • Stable off-state characteristics ID = 3.9 A g • High thermal cycling performance • Low thermal resistance RDS(ON) ≤ 1.2 Ω

5.2. phx6n60e.pdf Size:69K _philips2

PHX6ND50E
PHX6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 2.8 A g • Isolated package RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

Datasheet: PHX2N60E , PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , IRFZ34N , PHX7N60E , PHX8N50E , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 , PMBF4416 , PMBF4416A .

 


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