All MOSFET. RF1K49088 Datasheet

 

RF1K49088 MOSFET. Datasheet pdf. Equivalent

Type Designator: RF1K49088

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: MS012AA

RF1K49088 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1K49088 Datasheet (PDF)

1.1. rf1k49088.pdf Size:232K _fairchild_semi

RF1K49088
RF1K49088

RF1K49088 Data Sheet January 2002 3.5A, 30V, 0.06 Ohm, Logic Level, Dual Features N-Channel LittleFET™ Power MOSFET • 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using • rDS(ON) = 0.060Ω an advanced MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI integrated circuits, gives optimum ut

2.1. rf1k49086.pdf Size:142K _intersil

RF1K49088
RF1K49088

RF1K49086 Data Sheet August 1999 File Number 3986.5 3.5A, 30V, 0.06 Ohm, Dual N-Channel Features LittleFET™ Power MOSFET • 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using • rDS(ON) = 0.060Ω an advanced MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI integrated circuits, gives optimum

 3.1. rf1k49090.pdf Size:248K _fairchild_semi

RF1K49088
RF1K49088

RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual Features N-Channel LittleFET™ Power MOSFET • 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using • rDS(ON) = 0.050Ω an advanced MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI integrated circuits, gives optimum u

3.2. rf1k49093.pdf Size:141K _intersil

RF1K49088
RF1K49088

RF1K49093 Data Sheet August 1999 File Number 3969.5 2.5A, 12V, 0.130 Ohm, Logic Level, Dual Features P-Channel LittleFET™ Power MOSFET • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using • rDS(ON) = 0.130Ω an advanced MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI integrated circuits,

 3.3. rf1k49092.pdf Size:247K _intersil

RF1K49088
RF1K49088

RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Features Level, Complementary LittleFET™ Power • 3.5A, 12V (N-Channel) MOSFET 2.5A, 12V (P-Channel) This complementary power MOSFET is manufactured using • rDS(ON) = 0.050Ω (N-Channel) an advanced MegaFET process. This process, which uses rDS(ON) = 0.130Ω (P-Channel) feature sizes app

Datasheet: PMBFJ310 , PN4391 , PN4392 , PN4393 , PN4416 , PN4416A , PSMN003-25W , RF1K49086 , J310 , RF1K49090 , RF1K49092 , RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 .

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