RF1S9530SM
MOSFET. Datasheet pdf. Equivalent
Type Designator: RF1S9530SM
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO263AB
RF1S9530SM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF1S9530SM
Datasheet (PDF)
..1. Size:68K intersil
irf9530 rf1s9530sm.pdf 
IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the
8.1. Size:99K fairchild semi
irf9540 rf1s9540sm.pdf
IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
9.1. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a
9.2. Size:103K fairchild semi
irf9640 rf1s9640sm.pdf
IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
Datasheet: RF1S50N06SM
, RF1S530SM
, RF1S540SM
, RF1S60P03SM
, RF1S630SM
, RF1S640SM
, RF1S70N03SM
, RF1S70N06SM
, 10N65
, RF1S9540SM
, RF1S9630SM
, RF1S9640SM
, RFB18N10CS
, RFD10P03L
, RFD10P03LSM
, RFD12N06RLE
, RFD12N06RLESM
.
