All MOSFET. RF1S9540SM Datasheet

 

RF1S9540SM MOSFET. Datasheet pdf. Equivalent

Type Designator: RF1S9540SM

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO263AB

RF1S9540SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1S9540SM Datasheet (PDF)

1.1. irf9540 rf1s9540sm.pdf Size:99K _fairchild_semi

RF1S9540SM
RF1S9540SM

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs • 19A, 100V These are P-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω field effect transistors. They are advanced power MOSFETs • Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

4.1. irf9530 rf1s9530sm.pdf Size:68K _intersil

RF1S9540SM
RF1S9540SM

IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power Features MOSFETs • 12A, 100V These are P-Channel enhancement mode silicon gate • rDS(ON) = 0.300Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

5.1. irf9640 rf1s9640sm.pdf Size:103K _fairchild_semi

RF1S9540SM
RF1S9540SM

IRF9640, RF1S9640SM Data Sheet January 2002 11A, 200V, 0.500 Ohm, P-Channel Power Features MOSFETs • 11A, 200V These are P-Channel enhancement mode silicon-gate • rDS(ON) = 0.500Ω power field-effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

5.2. irf9630 rf1s9630sm.pdf Size:103K _fairchild_semi

RF1S9540SM
RF1S9540SM

IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs • 6.5A, 200V These are P-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω field effect transistors. They are advanced power MOSFETs • Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a

5.3. irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf Size:406K _harris_semi

RF1S9540SM
RF1S9540SM



Datasheet: RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , TPC8107 , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 .

 


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