All MOSFET. RFD3N08L Datasheet

 

RFD3N08L MOSFET. Datasheet pdf. Equivalent

Type Designator: RFD3N08L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO251AA

RFD3N08L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD3N08L Datasheet (PDF)

1.1. rfd3n08l-sm.pdf Size:365K _fairchild_semi

RFD3N08L
RFD3N08L

RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 2836.4 3A, 80V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs • 3A, 80V Title The RFD3N08L and RFD3N08LSM are N-Channel • rDS(ON) = 0.800Ω enhancement mode silicon gate power field effect transistors FD3 • Temperature Compensating PSPICE® Model specifically designed for use with logic level (5V) driving 8L,

Datasheet: RFD16N05LSM , RFD16N05SM , RFD16N06LE , RFD16N06LESM , RFD3055 , RFD3055LE , RFD3055LESM , RFD3055SM , 2N7000 , RFD3N08LSM , RFD4N06L , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E .

 


RFD3N08L
  RFD3N08L
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