All MOSFET. UPA1950 Datasheet

 

UPA1950 Datasheet and Replacement


   Type Designator: UPA1950
   Marking Code: TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.45 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.9 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SC-95
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UPA1950 Datasheet (PDF)

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UPA1950

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1950P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1950 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo

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UPA1950

201041NEC

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UPA1950

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1951P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1951 is a switching device, which can be drivendirectly by a 1.8 V power source.+0.10.32 0.050.16+0.10.06 The device features a low on-state resistance and excellentswitching characteristics, and is suitable f

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UPA1950

Preliminary Data Sheet PA1931 R07DS0009EJ0103Rev.1.03May 09, 2012MOS FIELD EFFECT TRANSISTOR Description The PA1931 is a switching device, which can be driven directly by a 4.5 V power source. The PA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Feat

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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