UPA2730TP MOSFET. Datasheet pdf. Equivalent
Type Designator: UPA2730TP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 97 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 1220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: HSOP-8
UPA2730TP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UPA2730TP Datasheet (PDF)
0.1. upa2730tp.pdf 
Size:208K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. upa2739t1a.pdf Size:139K _renesas
Data Sheet μPA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 –30 V, –85 A, 2.8 mΩ Nov 28, 2012 Description The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features • VDSS = -30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 2.8 mΩ MAX. (VGS = -10 V, ID = -46 A) ⎯ RDS(on) = 5.7 mΩ MAX. (VG
8.2. upa2732t1a.pdf Size:261K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. upa2736gr.pdf Size:193K _renesas
Data Sheet μPA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 –30 V, –14 A, 7.0 mΩ Aug 28, 2012 Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = -30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (VGS = -10 V, ID = -14
8.4. upa2735gr.pdf Size:181K _renesas
Data Sheet μPA2735GR P-channel MOSFET R07DS0867EJ0100 Rev.1.00 –30 V, –16 A, 5.0 mΩ Aug 28, 2012 Description The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = -30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 5.0 mΩ MAX. (VGS = -10 V, ID = -16
8.5. upa2732ut1a.pdf Size:260K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. upa2737gr.pdf Size:191K _renesas
Data Sheet μPA2737GR P-channel MOSFET R07DS0869EJ0100 Rev.1.00 –30 V, –11 A, 13 mΩ Aug 28, 2012 Description The μ PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = -30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 13 mΩ MAX. (VGS = -10 V, ID = -11 A)
8.7. upa2731ut1a.pdf Size:260K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. upa2734gr.pdf Size:265K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. upa2738gr.pdf Size:192K _renesas
Data Sheet μPA2738GR P-channel MOSFET R07DS0870EJ0100 Rev.1.00 –30 V, –10 A, 15 mΩ Aug 28, 2012 Description The μ PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = -30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = -10 V, ID = -10 A)
8.10. upa2733gr.pdf Size:148K _nec
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µ PA2733GR is P-channel MOS Field Effect Transistor 8 5 designed for power management applications of notebook 1, 2, 3 : Source 4 : Gate computers and so on. 5, 6, 7, 8: Drain FEATURES • Low on-state resistance 6.0 ±0.3 RDS(on)1 = 38 mΩ M
8.11. upa2731t1a.pdf Size:178K _nec
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2731T1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µ PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 1 8 battery protection circuit. 2 7 3 6 FEATURES 4 5 • Low on-state resistance 6 ±0.2 0.10 S RDS(on)1 = 3.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
