All MOSFET. SI6820DQ Datasheet

 

SI6820DQ MOSFET. Datasheet pdf. Equivalent

Type Designator: SI6820DQ

Type of Transistor: FET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Drain Current |Id|: 1.9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TSSOP8

SI6820DQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI6820DQ Datasheet (PDF)

1.1. si6820dq.pdf Size:68K _vishay

SI6820DQ
SI6820DQ

Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 20 20 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VF (v) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 D K TSSOP-8 D K G 1 8 D S A 2 7 Si6820DQ S A 3 6 G A 4 5 S A Top View ABSOLUTE MAXIMUM RATINGS (TA = 2

Datasheet: SI4435DY , SI4810DY , SI4812DY , SI4816DY , SI4818DY , SI4831DY , SI4832DY , SI4833DY , STP75NF75 , SI6821DQ , SI6923DQ , SML1001H9 , SML1001R1AN , SML1001R1BN , SML1001R1HN , SML1001R3AN , SML1001R3BN .

 


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