All MOSFET. GSM4172WS Datasheet

 

GSM4172WS Datasheet and Replacement


   Type Designator: GSM4172WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8P
 

 GSM4172WS substitution

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GSM4172WS Datasheet (PDF)

 ..1. Size:865K  globaltech semi
 gsm4172ws.pdf pdf_icon

GSM4172WS

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.1. Size:888K  globaltech semi
 gsm4172s.pdf pdf_icon

GSM4172WS

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1293K  globaltech semi
 gsm4124ws.pdf pdf_icon

GSM4172WS

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

 9.2. Size:748K  globaltech semi
 gsm4102w.pdf pdf_icon

GSM4172WS

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

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Datasheet: GSM3981 , GSM3993 , GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S , IRF640N , GSM4210 , GSM4210W , GSM4214 , GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 .

History: NTLJF3118NTAG | NTMS5838NLR2G

Keywords - GSM4172WS MOSFET datasheet

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