All MOSFET. GSM4248W Datasheet

 

GSM4248W MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM4248W

Marking Code: 4248W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.8 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 0.65 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SOP-8P

GSM4248W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4248W Datasheet (PDF)

1.1. gsm4248w.pdf Size:892K _update-mosfet

GSM4248W GSM4248W

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode  20V/6.0A,RDS(ON)=28mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/5.0A,RDS(ON)=32mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/4.0A,RDS(ON)=42mΩ@VGS=1.8V  Super high density cell design for extremely These devices are part

5.1. gsm4214.pdf Size:824K _update-mosfet

GSM4248W GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. These  Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

5.2. gsm4228.pdf Size:937K _update-mosfet

GSM4248W GSM4248W

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode  20V/8A,RDS(ON)=12mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/6A,RDS(ON)=15mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=20mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularly

 5.3. gsm4210w.pdf Size:937K _update-mosfet

GSM4248W GSM4248W

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode  30V/6.8A,RDS(ON)=32mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=40mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

5.4. gsm4210.pdf Size:966K _update-mosfet

GSM4248W GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode  30V/6.8A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 5.5. gsm4214w.pdf Size:794K _update-mosfet

GSM4248W GSM4248W

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low  S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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