GSM4422 Spec and Replacement
Type Designator: GSM4422
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Id| ⓘ - Maximum Drain Current: 6.8
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 80
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package:
SOP-8
GSM4422 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM4422 Specs
..1. Size:484K globaltech semi
gsm4422.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.0A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Super high density cell design for... See More ⇒
8.1. Size:1239K globaltech semi
gsm4424.pdf
40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/8A,RDS(ON)= 24m @VGS=10V GSM4424, N-Channel enhancement mode 40V/6A,RDS(ON)= 44m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low SOP-8... See More ⇒
8.2. Size:1210K globaltech semi
gsm4424w.pdf
GSM4424W 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/8A,RDS(ON)=22m @VGS=10V GSM4424W, N-Channel enhancement mode 40V/6A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are p... See More ⇒
9.1. Size:906K globaltech semi
gsm4412w.pdf
GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒
9.2. Size:1289K globaltech semi
gsm4440.pdf
60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒
9.3. Size:1086K globaltech semi
gsm4435ws.pdf
GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒
9.4. Size:935K globaltech semi
gsm4412.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe... See More ⇒
9.5. Size:981K globaltech semi
gsm4435w.pdf
GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-... See More ⇒
9.6. Size:1055K globaltech semi
gsm4447.pdf
GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒
9.7. Size:776K globaltech semi
gsm4435.pdf
GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo... See More ⇒
9.8. Size:1035K globaltech semi
gsm4435s.pdf
GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒
9.9. Size:1032K globaltech semi
gsm4401s.pdf
GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒
9.11. Size:793K globaltech semi
gsm4403.pdf
GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-8A,RDS(ON)=34m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m @VGS=-1.8V Super high density cell design for extremely These devices are par... See More ⇒
9.12. Size:929K globaltech semi
gsm4486.pdf
GSM4486 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4486, N-Channel enhancement mode 20V/9A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/7A,RDS(ON)=17m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m @VGS=1.8V Super high density cell design for extremely These devices are particularly... See More ⇒
Detailed specifications: GSM4214
, GSM4214W
, GSM4228
, GSM4248W
, GSM4401S
, GSM4403
, GSM4412
, GSM4412W
, 8205A
, MTB36N06V
, PHP36N06E
, PHB36N06E
, FTD36N06N
, SFP65N06
, IPI16CN10N
, GSM4424
, GSM4424W
.
Keywords - GSM4422 MOSFET specs
GSM4422 cross reference
GSM4422 equivalent finder
GSM4422 lookup
GSM4422 substitution
GSM4422 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
