All MOSFET. SSH45N20A Datasheet

 

SSH45N20A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSH45N20A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 278 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 3030 pF

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: TO3P

SSH45N20A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSH45N20A Datasheet (PDF)

1.1. ssh45n20a.pdf Size:211K _samsung

SSH45N20A
SSH45N20A

SSH45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology ? RDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input Capacitance ID = 45 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Low RDS(ON) : 0.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte

Datasheet: SSH25N40 , SSH25N40A , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A , SSH40N20 , SSH40N20A , IRF2807 , SSH4N70 , SSH4N70A , SSH4N80AS , SSH4N90AS , SSH5N80A , SSH5N90A , SSH60N06 , SSH60N06A .

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