All MOSFET. STD17N06 Datasheet

 

STD17N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD17N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: DPAK

STD17N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD17N06 Datasheet (PDF)

1.1. std17n05l std17n06l.pdf Size:350K _st

STD17N06
STD17N06

STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD17N05L 50 V < 0.085 ? 17 A STD17N06L 60 V < 0.085 ? 17 A TYPICAL R = 0.065 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 3 REPETITIVE AVALANCHE DATA AT 100oC 2 LOW GATE CHARGE 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATIO

3.1. std17n05.pdf Size:180K _st

STD17N06
STD17N06

STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD17N05 50 V < 0.085 ? 17 A STD17N06 60 V < 0.085 ? 17 A TYPICAL RDS(on) = 0.06 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED IPAK DPAK C

4.1. std17nf03l.pdf Size:264K _st

STD17N06
STD17N06

STD17NF03L N-CHANNEL 30V - 0.038? - 17A - DPAK/IPAK STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STD17NF03L 30V <0.05? 17A TYPICAL RDS(on) = 0.038? EXCEPTIONAL dv/dt CAPABILITY 3 APPLICATION ORIENTED CHARACTERIZATION 3 1 2 ADD SUFFIX “T4” FOR ORDERING IN TAPE & 1 REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK VERSION IPAK DPAK DESCRIPTION This Power Mosfet is the latest develop

4.2. std17ne03l.pdf Size:55K _st

STD17N06
STD17N06

STD17NE03L ® N - CHANNEL 30V - 0.034? - 17A - DPAK STripFET? " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD17NE03L 30 V < 0.05 ? 17 A TYPICAL R = 0.034 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED 3 CHARACTERIZATION FOR TAPE & REEL AND OTHER 1 PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252 (Suff

4.3. std17n.pdf Size:172K _st

STD17N06
STD17N06

STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD17N05L 50 V < 0.085 ? 17 A STD17N06L 60 V < 0.085 ? 17 A TYPICAL R = 0.065 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATI

4.4. std17nf03l std17nf03l-1.pdf Size:310K _st

STD17N06
STD17N06

STD17NF03L STD17NF03L-1 N-channel 30V - 0.038? - 17A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD17NF03L-1 30V <0.05? 17A STD17NF03L 30V <0.05? 17A 3 3 2 1 1 ¦ Exceptional dv/dt capability iPAK ¦ Low gate charge at 100°C DPAK ¦ Application oriented characterization ¦ 100% avalanche tested Description This Power MOSFET is the latest development o

4.5. sti17nf25 std17nf25 stf17nf25 stp17nf25.pdf Size:521K _st

STD17N06
STD17N06

STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14? - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID PTOT STD17NF25 250V < 0.165? 17A 90W 3 3 2 2 1 STI17NF25 250V < 0.165? 17A 90W 1 TO-220 I?PAK STF17NF25 250V < 0.165? 17A 25W STP17NF25 250V < 0.165? 17A 90W 3 ¦ Low gate charge 3 1 2 1 ¦ 100% aval

Datasheet: STD15N06LT4 , STD15N06T4 , STD17N05 , STD17N05-1 , STD17N05L , STD17N05L-1 , STD17N05LT4 , STD17N05T4 , IRFP260M , STD17N06-1 , STD17N06L , STD17N06L-1 , STD17N06LT4 , STD17N06T4 , STD1NA60-1 , STD1NA60T4 , STD20N06-1 .

 


STD17N06
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