All MOSFET. STD8N06-1 Datasheet

 

STD8N06-1 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD8N06-1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 340 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: IPAK

STD8N06-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD8N06-1 Datasheet (PDF)

3.1. std8n06.pdf Size:341K _st

STD8N06-1
STD8N06-1

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V < 0.25 ? 8 A TYPICAL R = 0.21 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251)

5.1. std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf Size:726K _st

STD8N06-1
STD8N06-1

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 ? , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V < 0.70 ? 7 A 1 IPAK STF8NM60ND 650 V < 0.70 ? 7 A TO-220 STP8NM60ND 650 V < 0.70 ? 7 A(1) STU8NM60ND 650 V < 0.70 ? 7 A 1. Limited only by maximum temperature allowed 3 3 1 2

5.2. stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf Size:698K _st

STD8N06-1
STD8N06-1

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature

5.3. std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf Size:1402K _st

STD8N06-1
STD8N06-1

STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 ?, 5 A MDmesh™II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V < 0.79 ? 5 A STP8NM50N STU8NM50N ¦ 100% avalanche tested ¦ Low input capacitances and gate charge 3 3 2 2 1 1 ¦ Low gate input resistance TO-220 TO-2

5.4. std8ns25.pdf Size:122K _st

STD8N06-1
STD8N06-1

STD8NS25 N-CHANNEL 250V - 0.38? - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD8NS25 250 V < 0.45 ? 8 A TYPICAL RDS(on) = 0.38 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 1 DPAK DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance.

5.5. stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf Size:1298K _st

STD8N06-1
STD8N06-1

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in D?PAK, I?PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 ? 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ¦ Worldwide best RDS(on) * area 3 3 1 ¦ Higher VDS

5.6. stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf Size:700K _st

STD8N06-1
STD8N06-1

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature

5.7. stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf Size:1239K _st

STD8N06-1
STD8N06-1

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in D?PAK, I?PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 ? 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ¦ Worldwide best RDS(on) * area 3 3 1 ¦ Higher VDS

5.8. std8n10.pdf Size:299K _no

STD8N06-1
STD8N06-1

This datasheet has been downloaded from http://www.digchip.com at this page

Datasheet: STD4N25-1 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , STD6N10T4 , IRF3710 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 .

 


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