All MOSFET. STH10NA50 Datasheet

 

STH10NA50 MOSFET. Datasheet pdf. Equivalent

Type Designator: STH10NA50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 9.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO218

STH10NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH10NA50 Datasheet (PDF)

1.1. sth10na50.pdf Size:386K _st

STH10NA50
STH10NA50

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH10NA50 500 V < 0.8 ? 9.6 A STH10NA50FI 500 V < 0.8 ? 5.6 A TO-247 STW10NA50 500 V < 0.8 ? 9.6 A TYPICAL R = 0.7 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 3 2 100% AVALANCHE TESTED 1 REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED RE

4.1. sth10n.pdf Size:243K _st

STH10NA50
STH10NA50

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STH10NA50 500 V < 0.8 ? 9.6 A STH10NA50FI 500 V < 0.8 ? 5.6 A TO-247 STW10NA50 500 V < 0.8 ? 9.6 A TYPICAL R = 0.7 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 3 2 100% AVALANCHE TESTED 1 REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED

4.2. stw10nc60,sth10nc60fi.pdf Size:337K _st2

STH10NA50
STH10NA50

STW10NC60 STH10NC60FI N-CHANNEL 600V - 0.6? - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STW10NC60 600 V < 0.75 ? 10 A STH10NC60FI 600 V < 0.75 ? 10 A (*) TYPICAL RDS(on) = 0.6 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 2 3 1 2 NEW HIGH VOLTAGE BENCHMARK 1 GATE CHARGE MINIMIZED TO-247 ISOWATT218 DESCRIPTION The PowerMESH™II is the evolut

Datasheet: STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , STE53NA50 , STE90N25 , BF245A , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STH15N50 .

 


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