All MOSFET. STP4N90 Datasheet

 

STP4N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: STP4N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm

Package: TO220

STP4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4N90 Datasheet (PDF)

5.1. stp4nb100-.pdf Size:53K _st

STP4N90
STP4N90

STP4NB100 STP4NB100FP ? N - CHANNEL 1000V - 4? - 3.8A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V < 4.4 ? 3.8 A STP4NB100FP 1000 V < 4.4 ? 2.1 A TYPICAL R =4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage

5.2. stp4nm60.pdf Size:548K _st

STP4N90
STP4N90

STP4NM60 STD3NM60 - STD3NM60-1 N-CHANNEL 600V - 1.3? - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NM60 600 V < 1.5 ? 4 A 69 W STD3NM60 600 V < 1.5 ? 3 A 42 W STD3NM60-1 600 V < 1.5 ? 3 A 42 W 3 2 TYPICAL RDS(on) = 1.3 ? 1 HIGH dv/dt AND AVALANCHE CAPABILITIES IPAK IMPROVED ESD CAPABILITY TO-220 LOW INPUT CAPACITANCE AND GATE CHARGE L

5.3. stp4na60fp.pdf Size:96K _st

STP4N90
STP4N90

STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP4NA60FP 600 V < 2.2 ? 2.7 A TYPICAL R = 1.85 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 REDUCED THRESHOLD VOLTAGE SPREAD 2 1 DESCRIPTION This series of

5.4. stp4n20.pdf Size:258K _st

STP4N90
STP4N90

STP4N20 ® N - CHANNEL 200V - 1.3 ? - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 ? 4 A TYPICAL R = 1.3 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 150 oC OPERATING TEMPERATURE 3 APPLICATION ORIENTED 2 1 CHARACTERIZATION APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID

5.5. stp4na80.pdf Size:383K _st

STP4N90
STP4N90

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V < 3 ? 4 A STP4NA80FI 800 V < 3 ? 2.5 A TYPICAL R = 2.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWA

5.6. stp4na40.pdf Size:382K _st

STP4N90
STP4N90

STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA40 400 V < 2 ? 4 A STP4NA40FI 400 V < 2 ? 2.8 A TYPICAL R = 1.7 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 IS

5.7. stp4nb80-.pdf Size:82K _st

STP4N90
STP4N90

STP4NB80 STP4NB80FP ® N - CHANNEL 800V - 3? - 4A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 ? 4 A STP4NB80FP 800 V 3.3 ? 4 A TYPICAL R = 3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY?

5.8. stp4n100.pdf Size:366K _st

STP4N90
STP4N90

STP4N100 STP4N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N100 1000 V < 3.5 ? 4 A STP4N100FI 1000 V < 3.5 ? 2.2 A TYPICAL R = 3.1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 AP

5.9. stp4na80-fi.pdf Size:391K _st

STP4N90
STP4N90

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V < 3 ? 4 A STP4NA80FI 800 V < 3 ? 2.5 A TYPICAL R = 2.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWA

5.10. stp4nb50 stp4nb50fp.pdf Size:176K _st

STP4N90
STP4N90

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5? - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V < 2.8 ? 3.8 A STP4NB50FP 500 V < 2.8 ? 2.5 A TYPICAL RDS(on) = 2.5 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 VERY LOW INTRINSIC CAPACITANCES 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest hi

5.11. stp4nk60z.pdf Size:759K _st

STP4N90
STP4N90

STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76?-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK60Z 600 V <2? 4 A 70 W STP4NK60ZFP 600 V <2? 4 A 25 W STB4NK60Z 600 V <2? 4 A 70 W 3 STB4NK60Z-1 600 V < 2 ? 4 A 70 W 1 3 STD4NK60Z 600 V <2? 4 A 70 W 2 D2PAK 1 STD4NK60Z-1 600 V <2? 4 A 70 W TO

5.12. stp4nk80z stp4nk80zfp std4nk80z std4nk80z-1.pdf Size:550K _st

STP4N90
STP4N90

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3? - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 2 STP4NK80Z 800 V < 3.5 ? 3 A 1 STP4NK80ZFP 800 V < 3.5 ? 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 ? 3 A STD4NK80Z-1 800 V < 3.5 ? 3 A ¦ Extremely high dv/dt capability 3 3 2 1 1 ¦ 100% aval

5.13. stp4na100.pdf Size:77K _st

STP4N90
STP4N90

STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NA100 1000 V <3. 5 ? 4.2 A TYPICAL R = 2.9 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 REDUCED THRESHOLD VOLTAGE SPREAD 2 1 DESCRIPTION This series of POWER

5.14. std4n52k3 stf4n52k3 stp4n52k3 stu4n52k3.pdf Size:932K _st

STP4N90
STP4N90

STD4N52K3, STF4N52K3 STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 ?, IPAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Order codes VDSS ID Pw max 3 3 2 1 1 STD4N52K3 2.5 A 45 W DPAK IPAK STF4N52K3 2.5 A 20 W 525 V < 2.6 ? STP4N52K3 2.5 A (1) 45 W STU4N52K3 2.5 A 45 W 1. Limited by package 3 ¦ 100% avalanche tested 3 2 2 1 1 ¦ Extremely high dv/dt

5.15. stp4nb50.pdf Size:163K _st

STP4N90
STP4N90

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5? - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V < 2.8 ? 3.8 A STP4NB50FP 500 V < 2.8 ? 2.5 A TYPICAL RDS(on) = 2.5 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 VERY LOW INTRINSIC CAPACITANCES 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest hi

5.16. std4nk50zd std4nk50zd-1 stf4nk50zd stp4nk50zd.pdf Size:903K _st

STP4N90
STP4N90

STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4? - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET General features 3 Type VDSS RDS(on) ID Pw 1 STD4NK50ZD-1 500V <2.7? 3A 45W 3 DPAK STD4NK50ZD 500V <2.7? 3A 45W 2 1 STF4NK50ZD 500V <2.7? 3A 20W TO-220 STP4NK50ZD 500V <2.7? 3A 45W ¦ 100% avalanche tested 3 3 ¦ Extremely high dv/dt capa

5.17. stp4nc80z.pdf Size:526K _st

STP4N90
STP4N90

STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4? - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 ? 4 A STB4NC80Z/-1 800V < 2.8 ? 4 A 3 1 TYPICAL RDS(on) = 2.4 ? D2PAK 3 2 EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RES

5.18. stf4n62k3 sti4n62k3 stp4n62k3 stu4n62k3.pdf Size:917K _st

STP4N90
STP4N90

STF4N62K3, STI4N62K3 STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 ?, 3.8 A SuperMESH3™ Power MOSFET TO-220FP, IPAK, TO-220, I?PAK Features Order codes VDSS RDS(on) max ID Pw 3 2 STF4N62K3 25 W 1 3 2 STI4N62K3 70 W 1 620 V < 2 ? 3.8 A IPAK TO-220FP STP4N62K3 70 W STU4N62K3 70 W ¦ 100% avalanche tested ¦ Extremely high dv/dt capability 3 3 2 1 2 1 ¦ Gate charge minimized I?PAK

5.19. stfw4n150 stp4n150 stw4n150.pdf Size:756K _st

STP4N90
STP4N90

STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 ?, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V < 7 ? 4 A 63 W 3 STP4N150 1500 V < 7 ? 4 A 160 W 2 3 1 2 1 STW4N150 1500 V < 7 ? 4 A 160 W TO-220 TO-247 ¦ 100% avalanche tested ¦ Intrinsic capacitances and Qg minimized 3 ¦ High speed switching 2 1 ¦ Fully isolated

5.20. stp4nk50z.pdf Size:664K _st

STP4N90
STP4N90

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V < 2.7 ? 3 A 45 W STP4NK50ZFP 500 V < 2.7 ? 3 A 20 W STD4NK50Z 500 V < 2.7 ? 3 A 45 W STD4NK50Z-1 500 V < 2.7 ? 3 A 45 W 3 TYPICAL RDS(on) = 2.3 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100%

5.21. stp4nc60-fp--1.pdf Size:356K _st

STP4N90
STP4N90

STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8? - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC60 600V <2.2? 4.2A STP4NC60FP 600V <2.2? 4.2A STB4NC60-1 600V <2.2? 4.2A TYPICAL RDS(on) = 1.8? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 TO-220 TO-220FP 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I2PAK

5.22. stp4nb100.pdf Size:302K _st

STP4N90
STP4N90

STP4NB100 STP4NB100FP ® N - CHANNEL 1000V - 4? - 3.8A - TO-220/TO-220FP PowerMESH? MOSFET TYPE V R I DSS DS(on) D STP4NB100 1000 V < 4.4 ? 3.8 A STP4NB100FP 1000 V < 4.4 ? 3.8 A TYPICAL R = 4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVE

5.23. stp4nb80.pdf Size:354K _st

STP4N90
STP4N90

STP4NB80 STP4NB80FP ® N - CHANNEL 800V - 3? - 4A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 ? 4 A STP4NB80FP 800 V 3.3 ? 4 A TYPICAL R = 3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroe

5.24. stb4nk60zx std4nk60zx stp4nk60z stp4nk60zfp.pdf Size:577K _st

STP4N90
STP4N90

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V < 2 ? 70 W 4 A TO-220 DPAK IPAK STB4NK60Z-1 600 V < 2 ? 70 W 4 A STD4NK60Z 600 V < 2 ? 70 W 4 A STD4NK60Z-1 600 V < 2 ? 70 W 4 A STP4NK60Z

5.25. stp4nk80z.pdf Size:620K _st

STP4N90
STP4N90

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK80Z 800 V < 3.5 ? 3 A 80 W STP4NK80ZFP 800 V < 3.5 ? 3 A 25 W STD4NK80Z 800 V < 3.5 ? 3 A 80 W STD4NK80Z-1 800 V < 3.5 ? 3 A 80 W 3 3 2 2 TYPICAL RDS(on) = 3 ? 1 1 TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY

5.26. stp4nb30.pdf Size:331K _st

STP4N90
STP4N90

STP4NB30 STP4NB30FP N-CHANNEL 300V - 1.8? - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STP4NB30 300 V < 2 ? 4 A STP4NB30FP 300 V < 2 ? 4 A TYPICAL RDS(on) = 1.8 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process

5.27. stp4na60.pdf Size:405K _st

STP4N90
STP4N90

STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA60 600 V < 2.2 ? 4.3 A STP4NA60FI 600 V < 2.2 ? 2.7 A TYPICAL R = 1.85 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO

5.28. stp4nc60a.pdf Size:338K _st

STP4N90
STP4N90

STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8? - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC60A 600V < 2? 4.2A STP4NC60AFP 600V < 2? 4.2A STB4NC60A-1 600V < 2? 4.2A TYPICAL RDS(on) = 1.8? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 TO-220 TO-220FP 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Th

5.29. stp4nc50(fp).pdf Size:324K _st

STP4N90
STP4N90

STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2? - 3.5A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 ? 3.5 A STP4NC50FP 500 V < 2.7 ? 3.5 A TYPICAL RDS(on) = 2.2 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the firs

5.30. stp4nk50z stp4nk50zfp std4nk50z std4nk50z-1.pdf Size:666K _st

STP4N90
STP4N90

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V < 2.7 ? 3 A 45 W STP4NK50ZFP 500 V < 2.7 ? 3 A 20 W STD4NK50Z 500 V < 2.7 ? 3 A 45 W STD4NK50Z-1 500 V < 2.7 ? 3 A 45 W 3 TYPICAL RDS(on) = 2.3 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100%

5.31. stb4n62k3 stf4n62k3 stp4n62k3 sti4n62k3.pdf Size:801K _st

STP4N90
STP4N90

STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 ?, 3.8 A SuperMESH3™ Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features RDS(on) Type VDSS ID Pw max 3 3 3 1 1 STB4N62K3 70 W 2 1 D?PAK STF4N62K3 25 W TO-220FP 620 V < 1.95 ? 3.8 A STI4N62K3 70 W STP4N62K3 70 W ¦ 100% avalanche tested 3 2 3 ¦ Extremely high dv/dt capability 1 2 1 ¦ Gate c

5.32. stp4nc80z stp4nc80zfp stb4nc80z stb4nc80z-1.pdf Size:553K _st

STP4N90
STP4N90

STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4? - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 ? 4 A STB4NC80Z/-1 800V < 2.8 ? 4 A 3 1 TYPICAL RDS(on) = 2.4 ? D2PAK 3 2 EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RES

5.33. std3nm60 std3nm60-1 stp4nm60.pdf Size:705K _st

STP4N90
STP4N90

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 1 STD3NM60 3 2 3 A 42 W DPAK 1 STD3NM60-1 650 < 1.5 ? TO-220 STP4NM60 4 A 69 W 3 2 1 ¦ High dv/dt and avalanche capabilities IPAK ¦ Improved ESD capability ¦ Low input capacitance and gate charge ¦ Low gate input

Datasheet: STP40N10 , STP40N10FI , STP4N100 , STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , IRFZ44N , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 .

 


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