All MOSFET. STP8N50XI Datasheet

 

STP8N50XI MOSFET. Datasheet pdf. Equivalent

Type Designator: STP8N50XI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: ISOWATT221

STP8N50XI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP8N50XI Datasheet (PDF)

5.1. stp8nm50.pdf Size:329K _st

STP8N50XI
STP8N50XI

STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7? - 8A TO-220/TO-220FP MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STP8NM50 500V < 0.8? 8 A STP8NM50FP 500V < 0.8? 8 A TYPICAL RDS(on) = 0.7? HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3 100% AVALANCHE TESTED 2 2 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-220 TO-220FP DESCRIPTION The MDmesh™ is a new revolutio

5.2. std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf Size:726K _st

STP8N50XI
STP8N50XI

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 ? , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V < 0.70 ? 7 A 1 IPAK STF8NM60ND 650 V < 0.70 ? 7 A TO-220 STP8NM60ND 650 V < 0.70 ? 7 A(1) STU8NM60ND 650 V < 0.70 ? 7 A 1. Limited only by maximum temperature allowed 3 3 1 2

5.3. stp8nm60,std5nm60.pdf Size:603K _st

STP8N50XI
STP8N50XI

STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9? - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP8NM60 600 V < 1 ? 8A 100 W STP8NM60FP 600 V < 1 ? 8A(*) 30 W STD5NM60 600 V < 1 ? 5A 96 W STD5NM60-1 600 V < 1 ? 5A 96 W 3 2 1 TYPICAL RDS(on) = 0.9? TO-220 TO-220FP HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT

5.4. stf8nk100z stp8nk100z.pdf Size:299K _st

STP8N50XI
STP8N50XI

STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.60? - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH™ MOSFET General features VDSS RDS(on) ID Pw Type STF8NK100Z 1000 V <1.85? 6.5 ANote 1 40 W STP8NK100Z 1000 V <1.85? 6.5 A 160 W ¦ EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 2 1 1 ¦ 100% AVALANCHE RATED TO-220 ¦ IMPROVED ESD CAPABILITY TO-220FP ¦ VERY LOW INTRINSIC CAPACITANCE Descripti

5.5. stp8nk85z stf8nk85z.pdf Size:338K _st

STP8N50XI
STP8N50XI

STP8NK85Z STF8NK85Z N-channel 850V - 1.1? - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP8NK85Z 850 V < 1.4 ? 6.7 A STF8NK85Z 850 V < 1.4 ? 6.7 A ¦ Extremely high dv/dt capability 3 2 ¦ 100% avalange tested 1 TO-220 TO-220FP ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing r

5.6. stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf Size:698K _st

STP8N50XI
STP8N50XI

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature

5.7. std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf Size:1402K _st

STP8N50XI
STP8N50XI

STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 ?, 5 A MDmesh™II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V < 0.79 ? 5 A STP8NM50N STU8NM50N ¦ 100% avalanche tested ¦ Low input capacitances and gate charge 3 3 2 2 1 1 ¦ Low gate input resistance TO-220 TO-2

5.8. stb8nm60d stp8nm60d.pdf Size:746K _st

STP8N50XI
STP8N50XI

STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9? - 8A - TO-220/D2PAK Fast Diode MDmesh™ Power MOSFET General features Type VDSS RDS(on) ID PTOT STB8NM60D 600V < 1.0? 8A 100W STP8NM60D 600V < 1.0? 8A 100W ¦ High dv/dt and avalanche capabilities 3 3 2 1 1 ¦ 100% avalanche rated D?PAK TO-220 ¦ Low input capacitance and gate charge ¦ Low gate input resistance ¦ Fast internal recovery diode

5.9. stp8ns25 stp8ns25fp.pdf Size:332K _st

STP8N50XI
STP8N50XI

STP8NS25 STP8NS25FP N-CHANNEL 250V - 0.38? - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STP8NS25 250 V < 0.45 ? 8 A STP8NS25FP 250 V < 0.45 ? 8 A TYPICAL RDS(on) = 0.38 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 1 1 DESCRIPTION TO-220 TO-220FP Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vance

5.10. stp8ns25.pdf Size:329K _st

STP8N50XI
STP8N50XI

STP8NS25 STP8NS25FP N-CHANNEL 250V - 0.38? - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STP8NS25 250 V < 0.45 ? 8 A STP8NS25FP 250 V < 0.45 ? 8 A TYPICAL RDS(on) = 0.38 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 1 1 DESCRIPTION TO-220 TO-220FP Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vance

5.11. stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf Size:1298K _st

STP8N50XI
STP8N50XI

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in D?PAK, I?PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 ? 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ¦ Worldwide best RDS(on) * area 3 3 1 ¦ Higher VDS

5.12. stp8nk80z stp8nk80zfp stw8nk80z.pdf Size:422K _st

STP8N50XI
STP8N50XI

STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3? - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID STP8NK80Z 800 V < 1.5 ? 6.2 A 3 2 1 STP8NK80ZFP 800 V < 1.5 ? 6.2 A TO-220 TO-220FP STW8NK80Z 800 V < 1.5 ? 6.2 A ¦ Extremely high dv/dt capability ¦ 100% avalanche tested ¦ Gate charge minimized ¦ Very low intrinsic capacita

5.13. stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf Size:700K _st

STP8N50XI
STP8N50XI

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature

5.14. stp8nk85z stf8nk85z 2.pdf Size:337K _st

STP8N50XI
STP8N50XI

STP8NK85Z STF8NK85Z N-channel 850V - 1.1? - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP8NK85Z 850 V < 1.4 ? 6.7 A STF8NK85Z 850 V < 1.4 ? 6.7 A ¦ Extremely high dv/dt capability 3 2 ¦ 100% avalange tested 1 TO-220 TO-220FP ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing r

5.15. stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf Size:1239K _st

STP8N50XI
STP8N50XI

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in D?PAK, I?PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 ? 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ¦ Worldwide best RDS(on) * area 3 3 1 ¦ Higher VDS

5.16. stp8nk80z.pdf Size:472K _st

STP8N50XI
STP8N50XI

STP8NK80Z - STP8NK80ZFP STW8NK80Z N-CHANNEL 800V - 1.3? - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP8NK80Z 800 V < 1.5 ? 6.2 A 140 W STP8NK80ZFP 800 V < 1.5 ? 6.2 A 30 W STW8NK80Z 800 V < 1.5 ? 6.2 A 140 W 3 TYPICAL RDS(on) = 1.3 ? 3 2 1 2 EXTREMELY HIGH dv/dt CAPABILITY 1 TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MI

5.17. stp8nm60 std5nm60 stb8nm60.pdf Size:559K _st

STP8N50XI
STP8N50XI

STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V < 1 ? 5 A 96 W 3 2 DPAK STD5NM60-1 650 V < 1 ? 5 A 96 W 1 TO-220FP STB8NM60 650 V < 1 ? 5 A 100 W 3 1 STP8NM60 650 V < 1 ? 8 A 100 W D?PAK STP8NM60FP 650 V < 1 ? 8 A(1) 30 W 3 ¦ 100% avalanche tested 3 2 2

5.18. stp8nm50 stp8nm50fp.pdf Size:286K _st

STP8N50XI
STP8N50XI

STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7? - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP8NM50 550V <0.8? 8A STP8NM50FP 550V <0.8? 8A (1) 3 1. Limited only by maximum temperature allowed 3 2 2 1 1 ¦ 100% avalanche tested TO-220 TO-220FP ¦ High dv/dt and avalanche capabilities ¦ Low gate input resistance ¦ Low input capa

5.19. stp8nc70z.pdf Size:532K _st

STP8N50XI
STP8N50XI

STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90? - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP8NC70Z/FP 700V < 1.2 ? 6.8 A STB8NC70Z/-1 700V < 1.2 ? 6.8 A 3 1 TYPICAL RDS(on) = 0.9 ? 3 D2PAK 2 EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE

5.20. stp8nc50-fp--1.pdf Size:352K _st

STP8N50XI
STP8N50XI

STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7? - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP(B)8NC50(-1) 500 V < 0.85 ? 8 A STP8NC50FP 500 V < 0.85 ? 8 A TYPICAL RDS(on) = 0.7 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 100% AVALANCHE TESTED TO-220 TO-220FP NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I?PAK The PowerMESH™

5.21. stp8na50.pdf Size:395K _st

STP8N50XI
STP8N50XI

STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP8NA50 500 V < 0.85 ? 8 A STP8NA50FI 500 V < 0.85 ? 4.5 A TYPICAL R = 0.7 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-

5.22. stp8nc60.pdf Size:326K _st

STP8N50XI
STP8N50XI

STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP8NC60 600 V < 1.0 ? 7 A STP8NC60FP 600 V < 1.0 ? 7 A TYPICAL RDS(on) = 0.85? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 2 GATE CHARGE MINIMIZED 1 TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generati

Datasheet: STP6NA80 , STP6NA80FI , STP7N20 , STP7N20FI , STP7NA40 , STP7NA40FI , STP7NA60 , STP7NA60FI , IRFP250N , STP8NA50 , STP8NA50FI , STP9N30 , STP9NA50 , STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 .

 


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