All MOSFET. STW12N60 Datasheet

 

STW12N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: STW12N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 2500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO247

STW12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW12N60 Datasheet (PDF)

4.1. stb12nk80z stp12nk80z stw12nk80z.pdf Size:526K _st

STW12N60
STW12N60

STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65? - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID PW (@Tjmax) STB12NK80Z 800V <0.75? 10.5 A 190W 3 STP12NK80Z 800V <0.75? 10.5 A 190W 2 1 STW12NK80Z 800V <0.75? 10.5 A 190W TO-220 TO-247 ¦ Extremely high dv/dt capability 3 ¦ Improved esd capability 1 ¦ 100% avalanch

4.2. stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf Size:618K _st

STW12N60
STW12N60

STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 2 1 STB12NM60N 650V < 0.41? 10A D?PAK I?PAK STB12NM60N-1 650V < 0.41? 10A STF12NM60N 650V < 0.41? 10A(1) STP12NM60N 650V < 0.41? 10A TO-247 STW12NM60N 650V < 0.41? 10A 3 3 2 2 1 1

4.3. stp12nk60z stf12nk60z stw12nk60z.pdf Size:835K _st

STW12N60
STW12N60

STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 ?, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 3 2 STP12NK60Z 650 V <0.640 ? 10 A 150 W 2 1 1 STF12NK60Z 650 V <0.640 ? 10 A 35 W TO-220 TO-220FP STW12NK60Z 650 V <0.640 ? 10 A 150 W ¦ Extremely high dv/dt capability 3 2 1 ¦ 100% avalanche

4.4. stw12na50.pdf Size:338K _st2

STW12N60
STW12N60

STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW12NA50 500 V < 0.6 ? 11.6 A TYPICAL R = 0.5 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 GATE GHARGE MINIMIZED 2 1 REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION TO-247 This series of POWER MOSFETS repr

4.5. stw12nk90z.pdf Size:271K _st2

STW12N60
STW12N60

STW12NK90Z N-channel 900V - 0.72? - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID pW STW12NK90Z 900V <0.88? 11A 230W ¦ Extremely high dv/dt capability ¦ 100% avalanche tested ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an ext

4.6. stw12na50-.pdf Size:147K _st2

STW12N60
STW12N60

STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STW12NA50 500 V < 0.6 ? 11.6 A TYPICAL R = 0.5 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 2 GATE GHARGE MINIMIZED 1 REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION TO-247 This series of POWER MOSFETS

4.7. stw12nc60.pdf Size:248K _st2

STW12N60
STW12N60

STW12NC60 N-CHANNEL 600V - 0.48? - 12A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STW12NC60 600V < 0.55? 12 A TYPICAL RDS(on) = 0.48? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced

4.8. stw12nb60.pdf Size:250K _st2

STW12N60
STW12N60

STW12NB60 N-CHANNEL 600V - 0.5? - 12A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STW12NB60 600V < 0.6? 12 A TYPICAL RDS(on) = 0.5? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of p

4.9. stw12nk95z.pdf Size:315K _st2

STW12N60
STW12N60

STW11NK100Z STW12NK95Z N-channel 950V - 0.69? - 10A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) STW12NK95Z 950 V < 0.90? 10 A 230W ¦ Gate charge minimized ¦ 100% avalanche tested ¦ Extremely high dv/dt capability TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

Datasheet: STV60N03L-12 , STV60N05 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 , 2SK3562 , STW12NA50 , STW14N50 , STW15N50 , STW15NA50 , STW16N40 , STW20NA50 , STW55N10 , STW60N10 .

 


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