All MOSFET. FCP11N60F Datasheet

 

FCP11N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: FCP11N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm

Package: TO220

FCP11N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP11N60F Datasheet (PDF)

1.1. fcp11n60f fcpf11n60f.pdf Size:620K _fairchild_semi

FCP11N60F
FCP11N60F

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.32? balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 120ns) lower gate charge performance. • Ultra Lo

2.1. fcp11n60n fcpf11n60nt.pdf Size:2711K _fairchild_semi

FCP11N60F
FCP11N60F

August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299? Features Description • RDS(on) = 0.255? ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi based tec

2.2. fcp11n60 fcpf11n60.pdf Size:621K _fairchild_semi

FCP11N60F
FCP11N60F

December 2008 TM SuperFET FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs • 650V @Tj = 150°C from Fairchild with outstanding low on-resistance and low • Typ. Rds(on)=0.32? gate charge performance, a result of proprietary technology • Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. • Low effective o

2.3. fcp11n60.pdf Size:1820K _fairchild_semi

FCP11N60F
FCP11N60F

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET® MOSFET is Fairchild Semiconductor’s first • 650V @Tj = 150°C genera-tion of high voltage super-junction (SJ) MOSFET • Typ. Rds(on)=0.32Ω family that is utilizing charge balance technology for • Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge • Low effective outpu

Datasheet: FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60N_F102 , STU618S , FCI7N60 , STU616S , BSS138 , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N , STU608S , FCP22N60N .

 


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