All MOSFET. 2SK2411 Datasheet

 

2SK2411 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2411

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: MP25

2SK2411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2411 Datasheet (PDF)

1.1. 2sk2411-z.pdf Size:50K _update

2SK2411
2SK2411

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high speed switching applications. 4.8 MAX. 10.6 MAX. 3.6 ±0.2 1.3 ±0.2 FEATURES 10.0 • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)

4.1. 2sk2414-z.pdf Size:218K _update

2SK2411
2SK2411

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk2415-z.pdf Size:50K _update

2SK2411
2SK2411

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed (in millimeters) for high voltage switching applications. 2.3 ± 0.2 6.5 ± 0.2 5.0 ± 0.2 0.5 ± 0.1 FEATURES 4 • Low On-Resistance RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID =

4.3. 2sk2417.pdf Size:399K _toshiba

2SK2411
2SK2411

2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2417 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.42 ? (typ.) High forward transfer admittance : |Y | = 7.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V =

4.4. 2sk241.pdf Size:400K _toshiba

2SK2411
2SK2411

2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source volt

Datasheet: 2SK2159 , 2SK2207 , 2SK2208 , 2SK2234 , 2SK2275 , 2SK2341 , 2SK2409 , 2SK2410 , IRF460 , 2SK2412 , 2SK2413 , 2SK2414 , 2SK2415 , 2SK2419 , 2SK2420 , 2SK2421 , 2SK2461 .

 


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