All MOSFET. STU407D Datasheet

 

STU407D MOSFET. Datasheet pdf. Equivalent

Type Designator: STU407D

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 11 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 16 A

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO252-4L

STU407D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU407D Datasheet (PDF)

1.1. stu407dh.pdf Size:197K _samhop

STU407D
STU407D

Green Product S TU407DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m Ω ) Max VDS S ID R DS (ON) ( m Ω ) Max 29 @ VG S = 10V 47 @ VG S = -10V -40V -12A 40V 16A 39 @ VG S = 4.5V 64 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1

1.2. stu407d.pdf Size:881K _samhop

STU407D
STU407D

S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) (N-C hannel) (P P R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel) V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 30 @ VG S = 10V 48 @ V G S = -10V -40V -12A 40V 16A 40 @ V G S = 4.5V 65 @ V G S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G

5.1. std40n2lh5 stu40n2lh5.pdf Size:917K _st

STU407D
STU407D

STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 ?, 40 A, DPAK, IPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD40N2LH5 25 V 0.0118 ? 40 A STU40N2LH5 25 V 0.0124 ? 40 A 3 3 2 RDS(on) * Qg industry benchmark 1 1 Extremely low on-resistance RDS(on) DPAK IPAK Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application

5.2. stu408d.pdf Size:270K _samhop

STU407D
STU407D

Green Product STU408D a S mHop Microelectronics C orp. Ver 1.1 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (mΩ) Max RDS(ON) (mΩ) Max VDSS ID VDSS ID 27 @ VGS=10V 37 @ VGS=-10V 40V 14A -40V -12A 41 @ VGS=4.5V 60 @ VGS=-4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 G2 S 1 N-ch S 2 P-ch TO-252-4L (

5.3. stu40n01 std40n01.pdf Size:106K _samhop

STU407D
STU407D

Gre r r P Pr Pr Pro STU/D40N01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Typ VDSS ID Rugged and reliable. 100V 40A 18 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I

5.4. stu409dh.pdf Size:194K _samhop

STU407D
STU407D

Green Product S TU409DH S amHop Microelectronics C orp. Dec,21,2009 Ver1.1 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m Ω ) Max VDS S ID R DS (ON) ( m Ω ) Max 24 @ VG S = 10V 35 @ VG S = -10V 40V 18A -40V -14A 30 @ VG S = 4.5V 50 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2

5.5. stu404d.pdf Size:196K _samhop

STU407D
STU407D

Green Product STU404D SamHop Microelectronics Corp. Sep 14 2006 ver1.1 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) (N-Channel) (P-Channel) PRODUCT SUMMARY PRODUCT SUMMARY VDSS ID RDS(ON) ( m Ω ) Max VDSS ID RDS(ON) ( m Ω ) Max 30 @ VGS = 10V 48 @ VGS = -10V -40V -12A 40V 16A 40 @ VGS = 4.5V 65 @ VGS = -4.5V D2 D1 D1/D2 S1 G2 G1 G1 S2 S2 S1 P-ch N-

5.6. stu405dh.pdf Size:194K _samhop

STU407D
STU407D

Green Product S TU405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m Ω ) Max VDS S ID R DS (ON) ( m Ω ) Max 33 @ VG S = 10V 45 @ VG S = -10V -40V - 9A 40V 11A 45 @ VG S = 4.5V 65 @ VG S = -4.5V D2 D1 D1/D2 S 1 G2

5.7. stu402d.pdf Size:632K _samhop

STU407D
STU407D

S T U402D S amHop Microelectronics C orp. MAY .03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 30 @ V G S = 10V 40V 16A TO252-4L package. 40 @ V G S =4.5V D2 D1 D1/D2 S 1 G2 G1 TO-252-4L G1 S 2 S 2 S 1 N-ch N-ch G2

Datasheet: FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , IRFP460 , FDB039N06 , FDB045AN08A0 , FDB045AN08A0_F085 , FDB047N10 , STU405DH , FDB050AN06A0 , FDB060AN08A0 , FDB070AN06A0 .

 


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