All MOSFET. FDB28N30TM Datasheet

 

FDB28N30TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB28N30TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.129 Ohm

Package: TO263_D2PAK

FDB28N30TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB28N30TM Datasheet (PDF)

1.1. fdb28n30tm.pdf Size:314K _fairchild_semi

FDB28N30TM
FDB28N30TM

June 2007 UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129? Features Description • RDS(on) = 0.108? ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 39nC) stripe, DMOS technology. • Low Crss ( Typ. 35pF) This advanced technology has been especially tailored

Datasheet: FDB15N50 , FDB2532 , FDB2532_F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , 2SK2996 , FDB33N25 , FDB3502 , FDB3632 , STU40N01 , FDB3652_F085 , STU410S , FDB3672_F085 , STU411D .

 


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