All MOSFET. VBM1101N Datasheet

 

VBM1101N Datasheet and Replacement


   Type Designator: VBM1101N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO220AB
 

 VBM1101N substitution

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VBM1101N Datasheet (PDF)

 ..1. Size:1080K  cn vbsemi
 vbm1101n vbl1101n.pdf pdf_icon

VBM1101N

VBM1101N/VBL1101Nwww.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC850.0100 at VGS = 6 VTO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S Top ViewN-Ch

 7.1. Size:946K  cn vbsemi
 vbm1101m.pdf pdf_icon

VBM1101N

VBM1101Mwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MA

 8.1. Size:469K  cn vbsemi
 vbm1102n.pdf pdf_icon

VBM1101N

VBM1102Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE M

 8.2. Size:1417K  cn vbsemi
 vbm1104n.pdf pdf_icon

VBM1101N

VBM1104Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, u

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Datasheet: VBL165R04 , VBL165R18 , VBL1806 , VBL2309 , VBL2610N , VBL2625 , VBL2658 , VBM1101M , EMB04N03H , VBM1102N , VBM1104N , VBM1105 , VBM1151N , VBM1158N , VBM1201K , VBM1201M , VBM1202M .

History: IPAN60R600P7S

Keywords - VBM1101N MOSFET datasheet

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