All MOSFET. FDC8601 Datasheet

 

FDC8601 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDC8601

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.6 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 2.7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.109 Ohm

Package: SSOT

FDC8601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDC8601 Datasheet (PDF)

1.1. fdc8601.pdf Size:276K _fairchild_semi

FDC8601
FDC8601

June 2010 FDC8601 N-Channel Power Trench® MOSFET 100 V, 2.7 A, 109 m? Features General Description Max rDS(on) = 109 m? at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 176 m? at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance trench technolog

4.1. fdc8602.pdf Size:258K _fairchild_semi

FDC8601
FDC8601

May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 575

5.1. fdc86244.pdf Size:332K _fairchild_semi

FDC8601
FDC8601

May 2013 FDC86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.3 A, 144 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 188 mΩ a

5.2. fdc86244.pdf Size:1294K _kexin

FDC8601
FDC8601

SMD Type MOSFET N-Channel MOSFET FDC86244 (KDC86244) ( ) SOT-23-6 Unit: mm +0.1 0.4 -0.1 ■ Features ● VDS (V) = 150V 6 5 4 ● ID = 2.3 A (VGS = 10V) ● RDS(ON) < 144mΩ (VGS = 10V) ● RDS(ON) < 188mΩ (VGS = 6V) 2 3 1 ● Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 4 S G 3 5 D 2 D 6 D D 1 ■ Absolute Maximum Ratings Ta = 25℃ Paramete

Datasheet: STU15L01 , FDC642P , FDC642P_F085 , FDC655BN , STU1530PL , FDC658AP , FDC855N , STU12L01 , 2N4416 , STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 , FDD10AN06A0 , FDD10N20LZ .

 


FDC8601
  FDC8601
  FDC8601
 

social 

LIST

Last Update

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |