All MOSFET. FDD2670 Datasheet

 

FDD2670 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD2670

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27 nC

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: TO252 DPAK

FDD2670 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD2670 Datasheet (PDF)

..1. fdd2670.pdf Size:95K _fairchild_semi

FDD2670
FDD2670

November 2001FDD2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs

..2. fdd2670.pdf Size:682K _onsemi

FDD2670
FDD2670

FDD2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fas t switching speedThese MOSFET's feature

9.1. fdd26an06 f085.pdf Size:871K _fairchild_semi

FDD2670
FDD2670

Aug 2011FDD26AN06A0_F085N-Channel PowerTrench MOSFET60V, 36A, 26mApplicationsFeatures Motor / Body Load Control rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A ABS Systems Qg(tot) = 13nC (Typ.), VGS = 10V Powertrain Management Low Miller Charge Injection Systems Low QRR Body Diode DC-DC converters and Off-line UPS UIS Capability (Si

9.2. fdd26an06a0.pdf Size:606K _fairchild_semi

FDD2670
FDD2670

August 2004FDD26AN06A0N-Channel PowerTrench MOSFET60V, 36A, 26mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv

 9.3. fdd2612.pdf Size:108K _fairchild_semi

FDD2670
FDD2670

August 2001FDD2612200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional High performance trench technology for extremelyswitching PWM controllers. It has be

9.4. fdd26an06a0 f085.pdf Size:821K _onsemi

FDD2670
FDD2670

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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