FDD2670 MOSFET Datasheet: N-Ch, 200V, 3.6A. Full specification with pinout and replacement list

FDD2670 Specs and Replacement

Type Designator: FDD2670

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO252 DPAK

FDD2670 substitution

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FDD2670 datasheet

..1. Size:95K fairchild semi
fdd2670.pdf pdf_icon

November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fast switching speed These MOSFETs... See More ⇒

..2. Size:682K onsemi
fdd2670.pdf pdf_icon

FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fas t switching speed These MOSFET's feature ... See More ⇒

9.1. Size:606K fairchild semi
fdd26an06a0.pdf pdf_icon

August 2004 FDD26AN06A0 N-Channel PowerTrench MOSFET 60V, 36A, 26m Features Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv... See More ⇒

9.2. Size:108K fairchild semi
fdd2612.pdf pdf_icon

August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be... See More ⇒