All MOSFET. FDD2670 Datasheet

 

FDD2670 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD2670

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27 nC

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: TO252, DPAK

FDD2670 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD2670 Datasheet (PDF)

1.1. fdd2670.pdf Size:95K _fairchild_semi

FDD2670 FDD2670

November 2001 FDD2670    200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • Low gate charge switching PWM controllers. • Fast switching speed These MOSFETs

5.1. fdd26an06 f085.pdf Size:871K _fairchild_semi

FDD2670 FDD2670

Aug 2011 FDD26AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Applications Features • Motor / Body Load Control • rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A • ABS Systems • Qg(tot) = 13nC (Typ.), VGS = 10V • Powertrain Management • Low Miller Charge • Injection Systems • Low QRR Body Diode • DC-DC converters and Off-line UPS • UIS Capability (Si

5.2. fdd26an06a0.pdf Size:606K _fairchild_semi

FDD2670 FDD2670

August 2004 FDD26AN06A0 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Features Applications • rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC conv

 5.3. fdd2612.pdf Size:108K _fairchild_semi

FDD2670 FDD2670

August 2001 FDD2612    200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has be

Datasheet: FDD16AN08A0_F085 , FDD18N20LZ , STU102S , FDD20AN06A0_F085 , FDD24AN06LA0_F085 , FDD2572 , FDD2572_F085 , FDD2582 , IRFB4227 , STU09N25 , FDD26AN06A0_F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 .

 

 
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