FDD2670 PDF and Equivalents Search

 

FDD2670 PDF Specs and Replacement


   Type Designator: FDD2670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO252 DPAK
 

 FDD2670 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDD2670 PDF Specs

 ..1. Size:95K  fairchild semi
fdd2670.pdf pdf_icon

FDD2670

November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fast switching speed These MOSFETs... See More ⇒

 ..2. Size:682K  onsemi
fdd2670.pdf pdf_icon

FDD2670

FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fas t switching speed These MOSFET's feature ... See More ⇒

 9.1. Size:606K  fairchild semi
fdd26an06a0.pdf pdf_icon

FDD2670

August 2004 FDD26AN06A0 N-Channel PowerTrench MOSFET 60V, 36A, 26m Features Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv... See More ⇒

 9.2. Size:108K  fairchild semi
fdd2612.pdf pdf_icon

FDD2670

August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be... See More ⇒

Detailed specifications: FDD16AN08A0F085 , FDD18N20LZ , STU102S , FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , BS170 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 .

Keywords - FDD2670 MOSFET specs

 FDD2670 cross reference
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