All MOSFET. FDD306P Datasheet

 

FDD306P MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD306P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 6.7 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15 nC

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO252, DPAK

FDD306P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD306P Datasheet (PDF)

0.1. fdd306p.pdf Size:505K _fairchild_semi

FDD306P FDD306P

January 2005 FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Features Applications ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V ■ DC/DC converter RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V General Description ■ Fast switching speed This P-Channel 1.8V Specified MOSFET uses Fairchild’s ■ High performance trench technology for ext

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