FDD306P MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD306P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 6.7 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 15 nC
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
FDD306P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD306P Datasheet (PDF)
0.1. fdd306p.pdf 
Size:505K _fairchild_semi
January 2005FDD306PP-Channel 1.8V Specified PowerTrench MOSFET Features Applications 6.7 A, 12 V. RDS(ON) = 28 m @ VGS = 4.5 V DC/DC converter RDS(ON) = 41 m @ VGS = 2.5 V RDS(ON) = 90 m @ VGS = 1.8 VGeneral Description Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchilds High performance trench technology for ext
Datasheet: FDD20AN06A0_F085 , FDD24AN06LA0_F085 , FDD2572 , FDD2572_F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0_F085 , IRF640N , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 , FDD3672_F085 , STU03L07 .
LIST
Last Update
MOSFET: IPB17N25S3-100 | IPB160N04S4L-H1 | IPB140N08S4-04 | IPB120P04P4-04 | IPB120N08S4-04 | IPB120N08S4-03 | IPB120N04S4L-02 | IPB120N04S4-04 | IPB120N03S4L-03 | IPB110P06LM | IPB060N15N5 | IPB032N10N5 | IPB024N10N5 | IPB019N08N5 | IPB017N10N5LF | IPAW70R950CE