All MOSFET. FDD306P Datasheet

 

FDD306P Datasheet and Replacement


   Type Designator: FDD306P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO252 DPAK
 

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FDD306P Datasheet (PDF)

 ..1. Size:505K  fairchild semi
 fdd306p.pdf pdf_icon

FDD306P

January 2005FDD306PP-Channel 1.8V Specified PowerTrench MOSFET Features Applications 6.7 A, 12 V. RDS(ON) = 28 m @ VGS = 4.5 V DC/DC converter RDS(ON) = 41 m @ VGS = 2.5 V RDS(ON) = 90 m @ VGS = 1.8 VGeneral Description Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchilds High performance trench technology for ext

Datasheet: FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0F085 , P0903BDG , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 .

History: 2N6763

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