FDD306P Specs and Replacement
Type Designator: FDD306P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
FDD306P substitution
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FDD306P datasheet
fdd306p.pdf
January 2005 FDD306P P-Channel 1.8V Specified PowerTrench MOSFET Features Applications 6.7 A, 12 V. RDS(ON) = 28 m @ VGS = 4.5 V DC/DC converter RDS(ON) = 41 m @ VGS = 2.5 V RDS(ON) = 90 m @ VGS = 1.8 V General Description Fast switching speed This P-Channel 1.8V Specified MOSFET uses Fairchild s High performance trench technology for ext... See More ⇒
Detailed specifications: FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0F085 , IRF1407 , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 .
Keywords - FDD306P MOSFET specs
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