FDD306P MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD306P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 6.7 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 15 nC
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
FDD306P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD306P Datasheet (PDF)
..1. fdd306p.pdf 
Size:505K _fairchild_semi
January 2005FDD306PP-Channel 1.8V Specified PowerTrench MOSFET Features Applications 6.7 A, 12 V. RDS(ON) = 28 m @ VGS = 4.5 V DC/DC converter RDS(ON) = 41 m @ VGS = 2.5 V RDS(ON) = 90 m @ VGS = 1.8 VGeneral Description Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchilds High performance trench technology for ext
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