All MOSFET. FDD8878 Datasheet

 

FDD8878 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD8878

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO252_DPAK

FDD8878 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD8878 Datasheet (PDF)

1.1. fdd8878 fdu8878.pdf Size:400K _fairchild_semi

FDD8878
FDD8878

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench® MOSFET 30V, 40A, 15m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m?, VGS = 4.5V, ID = 35A controllers. It has been optimized for l

4.1. fdd8876 fdu8876.pdf Size:468K _fairchild_semi

FDD8878
FDD8878

N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench® MOSFET 30V, 73A, 8.2m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 8.2m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 10m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for l

4.2. fdd8874 fdu8874.pdf Size:659K _fairchild_semi

FDD8878
FDD8878

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench® MOSFET 30V, 116A, 5.1m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 5.1m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 6.4m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for

4.3. fdd8870 fdu8870.pdf Size:486K _fairchild_semi

FDD8878
FDD8878

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 3.9m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 4.4m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for lo

4.4. fdd8870 f085.pdf Size:331K _fairchild_semi

FDD8878
FDD8878

Jan 2013 FDD8870_F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM • rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A controllers. It has been optimized for l

Datasheet: FDD8870 , STT01L07 , FDD8870_F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , 2SK3568 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896_F085 .

 


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