All MOSFET. 2SK2511 Datasheet

 

2SK2511 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2511

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: MP88

2SK2511 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2511 Datasheet (PDF)

4.1. 2sk2513-z.pdf Size:114K _update

2SK2511
2SK2511

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2513, 2SK2513-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran- (in millimeters) sistor designed for high current switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 ± 0.2 1.3 ± 0.2 10.0 • Low On-Resistance RDS(on)1 = 15 mΩ (VGS = 10 V,

5.1. 2sk258h.pdf Size:76K _update

2SK2511
2SK2511



5.2. 2sk2528-01.pdf Size:149K _update

2SK2511
2SK2511

N-channel MOS-FET 2SK2528-01 FAP-II Series 900V 3,6Ω 5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival

 5.3. 2sk259.pdf Size:52K _update

2SK2511
2SK2511

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK259 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 350

5.4. 2sk2563.pdf Size:252K _update

2SK2511
2SK2511

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2563 Case : E-pack Case : FTO-220 (Unit : mm) (F4F60VX2) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching po

 5.5. 2sk2527-01mr.pdf Size:137K _update

2SK2511
2SK2511

N-channel MOS-FET 2SK2527-01MR FAP-II Series 900V 3,6Ω 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

5.6. 2sk2562-01r.pdf Size:137K _update

2SK2511
2SK2511

N-channel MOS-FET 2SK2562-01R FAP-II Series 800V 2,2Ω 7A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

5.7. 2sk2504tl.pdf Size:83K _update

2SK2511
2SK2511

2SK2504 Transistors 4V Drive Nch MOS FET 2SK2504 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET CPT3 6.5 5.1 2.3 0.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.75 4) 4V drive. 0.65 0.9 2.3 (1)Gate 5) Drive circuits can be simple. 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 6) Parallel use is e

5.8. 2sk2561-01r.pdf Size:125K _update

2SK2511
2SK2511

N-channel MOS-FET 2SK2561-01R FAP-II Series 600V 1,2Ω 9A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristi

5.9. 2sk258.pdf Size:53K _update

2SK2511
2SK2511

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK258 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Sourc

5.10. 2sk2503tl.pdf Size:142K _update

2SK2511
2SK2511

Transistors Small switching (60V, 5A) 2SK2503 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 122 Transistors 2S

5.11. 2sk259h 2sk260h.pdf Size:160K _update

2SK2511
2SK2511



5.12. 2sk2599.pdf Size:417K _toshiba

2SK2511
2SK2511

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2599 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 2.9 ? (typ.) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

5.13. 2sk2542.pdf Size:409K _toshiba

2SK2511
2SK2511

2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2542 Switching Regulator Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.75 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 500 V) DS Enhancement-mode : V = 2.0~4.0 V (V = 10 V, I = 1 mA)

5.14. 2sk2508.pdf Size:412K _toshiba

2SK2511
2SK2511

2SK2508 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2508 Switching Regulator and DC-DC Converter and Motor Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.18 ? (typ.) High forward transfer admittance : |Y | = 13 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10

5.15. 2sk2507.pdf Size:426K _toshiba

2SK2511
2SK2511

2SK2507 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2507 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.034 ? (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 50 V) Enhancement mode : Vth

5.16. 2sk2543.pdf Size:409K _toshiba

2SK2511
2SK2511

2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2543 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.75 ? (typ.) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum R

5.17. 2sk2550.pdf Size:137K _toshiba

2SK2511
2SK2511

2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2550 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 24 m? (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10

5.18. 2sk2544.pdf Size:417K _toshiba

2SK2511
2SK2511

2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2544 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.9 ? (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

5.19. 2sk2551.pdf Size:385K _toshiba

2SK2511
2SK2511

2SK2551 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2551 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 7.2 m? (typ.) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (V = 10

5.20. 2sk2545.pdf Size:414K _toshiba

2SK2511
2SK2511

2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 ?(typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I =

5.21. 2sk2598.pdf Size:418K _toshiba

2SK2511
2SK2511

2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2598 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.18 ? (typ.) High forward transfer admittance : |Y | = 13 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (VDS =

5.22. 2sk2549.pdf Size:372K _toshiba

2SK2511
2SK2511

2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.29 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V = 0.5~

5.23. 2sk2555.pdf Size:42K _sanyo

2SK2511
2SK2511

Ordering number:ENN5316A N-Channel Silicon MOSFET 2SK2555 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SK2555] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK2555] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3

5.24. 2sk2530.pdf Size:42K _sanyo

2SK2511
2SK2511

Ordering number:ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2083B Low voltage drive. [2SK2530] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP 2092B [2SK2530] 6.5 2.3 5.0 0.5 4 0.5 0.8

5.25. 2sk2539.pdf Size:65K _sanyo

2SK2511
2SK2511

Ordering number:ENN5075 N-Channel Junction Silicon FET 2SK2539 High-Frequency Amplifier, Analog Switch Applications Features Package Dimensions Large | yfs |. unit:mm Small Ciss. 2050A Small-sized package permitting 2SK2539-applied [2SK2539] sets to be made small and slim. Adoption of FBET process. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 : Source 2 : Drain 3

5.26. 2sk2554.pdf Size:90K _renesas

2SK2511
2SK2511

2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 (Previous: ADE-208-359D) Rev.6.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 4.5 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. S

5.27. 2sk2596.pdf Size:146K _renesas

2SK2511
2SK2511

2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ?D = 45%min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source

5.28. rej03g1020 2sk2586ds.pdf Size:104K _renesas

2SK2511
2SK2511

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.29. 2sk2569.pdf Size:104K _renesas

2SK2511
2SK2511

2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features Low on-resistance. RDS(on) = 2.6 ? max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 G 1. Source 2 2. Gate 3. Drain S Note: Marking is "

5.30. 2sk2586.pdf Size:90K _renesas

2SK2511
2SK2511

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Sourc

5.31. 2sk2568.pdf Size:59K _renesas

2SK2511
2SK2511

2SK2568 Silicon N Channel MOS FET REJ03G1017-0300 (Previous: ADE-208-1363) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Sour

5.32. 2sk2529.pdf Size:89K _renesas

2SK2511
2SK2511

2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1

5.33. 2sk2553.pdf Size:96K _renesas

2SK2511
2SK2511

2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1015-1000 (Previous: ADE-208-357H) Rev.10.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code

5.34. rej03g1016 2sk2554ds.pdf Size:103K _renesas

2SK2511
2SK2511

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.35. 2sk2595.pdf Size:134K _renesas

2SK2511
2SK2511

2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ?D = 50% min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS Package code : PLSS0003ZA-A (Package Name : RP8P) D 1 G 3 1. Gate 2 2. Source S 3. Drain Note: Mark

5.36. rej03g1015 2sk2553lsds.pdf Size:109K _renesas

2SK2511
2SK2511

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.37. 2sk2552.pdf Size:240K _nec

2SK2511
2SK2511

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2552 is suitable for converter of ECM. 0.3 +0.1 –0 0.15+0.1 –0.05 FEATURES • Compact package 3 • High forward transfer admittance 0 to 0.1 1000 µS TYP. (IDSS = 100 µA) 2 1 1600 µS TY

5.38. 2sk2503 1-5.pdf Size:135K _rohm

2SK2511
2SK2511

5.39. 2sk2504 1-5.pdf Size:135K _rohm

2SK2511
2SK2511

5.40. 2sk2504.pdf Size:134K _rohm

2SK2511
2SK2511

Transistors Small switching (100V, 5A) 2SK2504 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 126 Transistors 2SK2504 FE

5.41. 2sk2503.pdf Size:135K _rohm

2SK2511
2SK2511

Transistors Small switching (60V, 5A) 2SK2503 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 122 Transistors 2SK25

5.42. 2sk2538.pdf Size:30K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2538 2SK2538 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed 5.5 0.2 2.7 0.2 High-speed switching No secondary breakdown o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Absolute Maximum Ratings

5.43. 2sk2509.pdf Size:30K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2509 2SK2509 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching Low ON-resistance No secondary breakdown 1.5max. 1.1max. Applications Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control equipment 1 2 3 Switching mode regulat

5.44. 2sk2580.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2580 2SK2580(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor driv

5.45. 2sk2573.pdf Size:24K _panasonic

2SK2511

Power F-MOS FETs 2SK2574 2SK2573(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Swit

5.46. 2sk2588.pdf Size:30K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2588 2SK2588 Silicon N-Channel Power F-MOS Unit : mm Features High-speed switching 4.6 0.2 9.9 0.3 2.9 0.2 Low ON-resistance o3.2 0.1 No secondary breakdown Low-voltage drive 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment 1 2 3 7? Switching mode regul

5.47. 2sk2576.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2576 2SK2576(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Applications 0.75 0.1 Non-contact relay 2.54 0.2 Solenoid drive 5.08 0.4 Motor drive

5.48. 2sk2571.pdf Size:24K _panasonic

2SK2511

Power F-MOS FETs 2SK2572 2SK2571(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Swit

5.49. 2sk2593.pdf Size:30K _panasonic

2SK2511
2SK2511

Silicon Junction FETs (Small Signal) 2SK2593 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification 1.6 0.15 For switching 0.4 0.8 0.1 0.4 Features 1 Low noise, high gain 3 High gate-drain voltage VGDO Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25?C) 0.2 0.

5.50. 2sk2575.pdf Size:35K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2575 2SK2575(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor drive

5.51. 2sk2579.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2579 2SK2579(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor driv

5.52. 2sk2572.pdf Size:36K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2572 2SK2572(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Swit

5.53. 2sk2581.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2581 2SK2581(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor driv

5.54. 2sk2577.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2577 2SK2577(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor drive

5.55. 2sk2578.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2578 2SK2578(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor driv

5.56. 2sk2574.pdf Size:34K _panasonic

2SK2511
2SK2511

Power F-MOS FETs 2SK2574 2SK2574(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.4 Motor drive

5.57. 2sk2564.pdf Size:246K _shindengen

2SK2511
2SK2511

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2564 Case : E-pack Case : FTO-220 (Unit : mm) (F8F60VX2) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching p

Datasheet: 2SK2485 , 2SK2486 , 2SK2487 , 2SK2488 , 2SK2494-01 , 2SK2498 , 2SK2499 , 2SK2510 , IRFP4229 , 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 , 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR .

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MOSFET: ZXMS6006SGQ | ZXMS6006DT8Q | ZXMS6006DGQ | ZXMS6005SGQ | ZXMS6005DT8Q | ZXMS6005DGQ | ZXMS6004SGQ | ZXMS6004FFQ | ZXMS6004DT8Q | ZXMS6004DGQ | ZXMS6002GQ | ZXMP7A17KTC | ZXMP7A17GTA | ZXMP7A17GQ | ZXMP6A18KTC |