All MOSFET. STS3405 Datasheet

 

STS3405 MOSFET. Datasheet pdf. Equivalent

Type Designator: STS3405

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3 A

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SOT23

STS3405 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS3405 Datasheet (PDF)

1.1. sts3405.pdf Size:111K _samhop

STS3405
STS3405

Green Product STS3405 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 100 @ VGS=-10V SOT-23 package. -30V -3A 150 @ VGS=-4.5V D SOT-23 G S (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Paramete

4.1. sts3401a.pdf Size:95K _samhop

STS3405
STS3405

Gre r r P Pr Pr Pro STS3401A a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 79 @ VGS=-10V Suface Mount Package. -30V -3.2A 127 @ VGS=-4.5V D SOT-23 D G S G S (TA=25°C unless otherwise noted) ABSOLUTE MAXI

4.2. sts3404.pdf Size:170K _samhop

STS3405
STS3405

Green Product STS3404 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 54 @ VGS= 10V Suface Mount Package. 30V 4A 76 @ VGS= 4.5V D S OT23-3L D G S G S (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS

4.3. sts3406.pdf Size:100K _samhop

STS3405
STS3405

Green Product STS3406 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 174 @ VGS=10V Suface Mount Package. 30V 2A 218 @ VGS=4.5V ESD Protected. 311 @ VGS=2.5V D SOT23 G D S G S (TA=25°C unless otherwise noted)

4.4. sts3401.pdf Size:132K _samhop

STS3405
STS3405

Green Product S TS 3401 S amHop Microelectronics C orp. J un.15 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y F E ATUR E S VDS S ID S uper high dense cell design for low R DS (ON). R DS (ON) ( m Ω ) Max R ugged and reliable. 75 @ VG S = -10V -30V -3A S OT-23 Package. 100 @ VG S = -4.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

4.5. sts3402.pdf Size:132K _samhop

STS3405
STS3405

Green Product S TS 3402 S amHop Microelectronics C orp. AUG .18 2004 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 30@ VG S = 10V 30V 4.6A S OT-23 package. 42@ VG S =4.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherw

4.6. sts3409.pdf Size:100K _samhop

STS3405
STS3405

Gr P Pr P P STS3409 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 169 @ VGS=-10V Suface Mount Package. -30V -2.2A 293 @ VGS=-4.5V D SOT-23 D G S G S (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATING

4.7. sts3400.pdf Size:111K _samhop

STS3405
STS3405

S TS 3400 S amHop Microelectronics C orp. S ep.21 2004 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 50 @ VG S = 10V 30V 3.5A S OT-23 package. 70 @ VG S =4.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Li

4.8. sts3409l.pdf Size:95K _samhop

STS3405
STS3405

re r r P Pr Pr Pro STS3409L a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 75 @ VGS=-10V Suface Mount Package. -20V -3.2A 95 @ VGS=-4.5V 137 @ VGS=-2.5V D SOT-23 G D S G S (TA=25°C unless otherwise noted)

Datasheet: FDI150N10 , STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441_F085 , FDL100N50F , FDM3622 , IRFP450 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ , FDMA1029PZ .

 


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