All MOSFET. JFFM9N90C Datasheet

 

JFFM9N90C MOSFET. Datasheet pdf. Equivalent

Type Designator: JFFM9N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 34 nC

Drain-Source Capacitance (Cd): 137 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220F

JFFM9N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFFM9N90C Datasheet (PDF)

 ..1. Size:563K  jiaensemi
 jfpc9n90c jffm9n90c.pdf

JFFM9N90C JFFM9N90C

JFPC9N90C JFFM9N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 8.1. Size:845K  jiaensemi
 jfpc9n50c jffm9n50c.pdf

JFFM9N90C JFFM9N90C

JFPC9N50C JFFM9N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 9A, 500V, RDS(on)typ. = 0.85@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRLB4132 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top