All MOSFET. FDN372S Datasheet

 

FDN372S MOSFET. Datasheet pdf. Equivalent

Type Designator: FDN372S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 2.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: SSOT

FDN372S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDN372S Datasheet (PDF)

1.1. fdn372s.pdf Size:142K _fairchild_semi

FDN372S
FDN372S

September 2002 FDN372S ? ? ? 30V N-Channel PowerTrench? SyncFET™ General Description Features The FDN372S is designed to replace a single MOSFET • 2.6 A, 30 V. RDS(ON) = 40 m? @ VGS = 10 V and Schottky diode, used in synchronous DC-DC RDS(ON) = 50 m? @ VGS = 4.5 V power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion ef

5.1. fdn371n.pdf Size:84K _fairchild_semi

FDN372S
FDN372S

September 2001 FDN371N  20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high • 2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 60 mΩ @ VGS = 2.5 V power management applications. Applications • Low gate charge (7.6 nC typical) • Load switch • Fast

Datasheet: FDN308P , FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A , FDN361BN , STM4884 , IRF9640 , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , FDN86246 , FDP025N06 , FDP030N06 .

 


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