All MOSFET. FDP10N60NZ Datasheet

 

FDP10N60NZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP10N60NZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 185 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO220

FDP10N60NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP10N60NZ Datasheet (PDF)

1.1. fdp10n60nz fdpf10n60nz.pdf Size:659K _fairchild_semi

FDP10N60NZ
FDP10N60NZ

November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ.

2.1. fdp10n60zu fdpf10n60zut.pdf Size:554K _fairchild_semi

FDP10N60NZ
FDP10N60NZ

April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8? Features Description RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 31nC) stripe, DMOS technology. Low Crss ( Typ. 15pF) This advance technology has be

4.1. fdp10n50u fdpf10n50ut.pdf Size:483K _fairchild_semi

FDP10N60NZ
FDP10N60NZ

November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05? Features Description RDS(on) = 0.85? ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 9pF) This advan ce technology has been espec

4.2. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

FDP10N60NZ
FDP10N60NZ

January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85? Features Description RDS(on) = 0.71? ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 10pF) This advance technology has been especial

Datasheet: FDP075N15A_F102 , FDP083N15A_F102 , FDP085N10A_F102 , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , IRF3205 , STM4532 , FDP120N10 , STM4470E , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 .

 


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